Homogeneity of thermally annealed Fe-doped InP wafers

被引：6

作者：

Fornari, R ^{[1
]}

Gilioli, E ^{[1
]}

Sentiri, A ^{[1
]}

Mignoni, G ^{[1
]}

Avella, M ^{[1
]}

Jimenez, J ^{[1
]}

Alvarez, A ^{[1
]}

Gonzalez, MA ^{[1
]}

机构：

[1] ETS INGN IND,VALLADOLID 47011,SPAIN

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

homogeneity; photoluminescence; scanning photocurrent;

D O I：

10.1016/S0921-5107(96)01752-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Iron doped InP wafers have been submitted to different thermal treatments. The consequences of these treatments in terms of electrical properties and homogeneity were studied by mean of different experimental techniques: Hall effect, DSL and BCA chemical etching and scanning photocurrent. The electric compensation and the homogeneity are shown to be improved by the thermal treatments. These results are discussed on the bases of donor removal and iron migration to the wafer edges. (C) 1997 Elsevier Science S.A.

引用

页码：233 / 237

页数：5

共 12 条

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