Thin film solar cell with 8.4% power conversion efficiency using an earth-abundant Cu2ZnSnS4 absorber

被引:1030
作者
Shin, Byungha [1 ]
Gunawan, Oki [1 ]
Zhu, Yu [1 ]
Bojarczuk, Nestor A. [1 ]
Chey, S. Jay [1 ]
Guha, Supratik [1 ]
机构
[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源
PROGRESS IN PHOTOVOLTAICS | 2013年 / 21卷 / 01期
关键词
Cu2ZnSnS4; earth-abundant absorber; co-evaporation; photoluminescence; PHOTOVOLTAICS;
D O I
10.1002/pip.1174
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Using vacuum process, we fabricated Cu2ZnSnS4 solar cells with 8.4% efficiency, a number independently certified by an external, accredited laboratory. This is the highest efficiency reported for pure sulfide Cu2ZnSnS4 prepared by any method. Consistent with literature, the optimal composition is Cu-poor and Zn-rich despite the precipitation of secondary phases (e.g., ZnS). Despite a very thin absorber thickness (similar to 600 nm), a reasonably good short-circuit current was obtained. Time-resolved photoluminescence measurements suggest a minority carrier-diffusion length on the order of several hundreds of nanometers and relatively good collection of photo-carriers across the entire absorber thickness. Copyright (C) 2011 John Wiley & Sons, Ltd.
引用
收藏
页码:72 / 76
页数:5
相关论文
共 19 条
[1]   Intrinsic point defects and complexes in the quaternary kesterite semiconductor Cu2ZnSnS4 [J].
Chen, Shiyou ;
Yang, Ji-Hui ;
Gong, X. G. ;
Walsh, Aron ;
Wei, Su-Huai .
PHYSICAL REVIEW B, 2010, 81 (24)
[2]   Growth and Raman scattering characterization of Cu2ZnSnS4 thin films [J].
Fernandes, P. A. ;
Salome, P. M. P. ;
da Cunha, A. F. .
THIN SOLID FILMS, 2009, 517 (07) :2519-2523
[3]  
GROVE AS, 1967, PHYS TECHNOL S, P159
[4]   Loss mechanisms in hydrazine-processed Cu2ZnSn(Se,S)4 solar cells [J].
Gunawan, Oki ;
Todorov, Teodor K. ;
Mitzi, David B. .
APPLIED PHYSICS LETTERS, 2010, 97 (23)
[5]   Fabrication of 7.2% Efficient CZTSSe Solar Cells Using CZTS Nanocrystals [J].
Guo, Qijie ;
Ford, Grayson M. ;
Yang, Wei-Chang ;
Walker, Bryce C. ;
Stach, Eric A. ;
Hillhouse, Hugh W. ;
Agrawal, Rakesh .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2010, 132 (49) :17384-17386
[6]   Band alignment at the Cu2ZnSn(SxSe1-x)4/CdS interface [J].
Haight, Richard ;
Barkhouse, Aaron ;
Gunawan, Oki ;
Shin, Byungha ;
Copel, Matt ;
Hopstaken, Marinus ;
Mitzi, David B. .
APPLIED PHYSICS LETTERS, 2011, 98 (25)
[7]   Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique [J].
Katagiri, Hironori ;
Jimbo, Kazuo ;
Yamada, Satoru ;
Kamimura, Tsuyoshi ;
Maw, Win Shwe ;
Fukano, Tatsuo ;
Ito, Tadashi ;
Motohiro, Tomoyoshi .
APPLIED PHYSICS EXPRESS, 2008, 1 (04) :0412011-0412012
[8]   Efficiency limits for single junction and tandem solar cells [J].
Meillaud, F. ;
Shah, A. ;
Droz, C. ;
Vallat-Sauvain, E. ;
Miazza, C. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) :2952-2959
[9]   The path towards a high-performance solution-processed kesterite solar cell [J].
Mitzi, David B. ;
Gunawan, Old ;
Todorov, Teodor K. ;
Wang, Kejia ;
Guha, Supratik .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2011, 95 (06) :1421-1436
[10]   Cu2ZnSnS4 thin films annealed in H2S atmosphere for solar cell absorber prepared by pulsed laser deposition [J].
Moriya, Katsuhiko ;
Tanaka, Kunihiko ;
Uchiki, Hisao .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (01) :602-604