Transport in two-dimensional electron gas with isolated magnetic barriers

被引：5

作者：

Hara, M

Endo, A

Katsumoto, S

Iye, Y

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[2] Japan Sci & Technol Corp, CREST Project, Toshima Ku, Tokyo 1710031, Japan

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 2002年 / 71卷 / 02期

关键词：

GaAs/AlGaAs; 2DEG; magnetic barrier; electron-electron scattering; positive magnetoresistance; Shubnikov-de Haas oscillations;

D O I：

10.1143/JPSJ.71.543

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have studied the transport in two-dimensional electron gas (2DEG) subjected to two different types of magnetic barriers-dipolar and monopolar barriers-using fringing magnetic field from ferromagnetic film on the surface of GaAs/AlGaAs heterostructures. Resistivity of 2DEG increases as the magnetic barriers are turned on. We measured amplitude dependence and temperature dependence of the excess resistivities due to those magnetic barriers. The resistance as a function of the uniform component of the magnetic field exhibits a positive magnetoresistance and a beating pattern of the Shubnikov-de Haas oscillations. They are qualitatively explained by considering the various cyclotron trajectories in the region of the magnetic barriers.

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收藏

页码：543 / 549

页数：7

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