Magnetic-Field-Induced Delocalized to Localized Transformation in GaAs:N

被引：10

作者：

Alberi, K. ^{[1
]}

Crooker, S. A. ^{[2
]}

Fluegel, B. ^{[1
]}

Beaton, D. A. ^{[1
]}

Ptak, A. J. ^{[1
]}

Mascarenhas, A. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Natl High Magnet Field Lab, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 15期

关键词：

NITROGEN; GAAS1-XNX; ABSORPTION; PHOTOLUMINESCENCE; LUMINESCENCE; EVOLUTION;

D O I：

10.1103/PhysRevLett.110.156405

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The use of a high magnetic field (57 T) to study the formation and evolution of nitrogen (N) cluster and supercluster states in GaAs: N is demonstrated. A magnetic field is used to lift the conduction band edge and expose resonant N cluster states so that they can be directly experimentally investigated. The reduction of the exciton Bohr radius also results in the fragmentation of N supercluster states, enabling a magnetic field induced delocalized to localized transition. The application of very high magnetic fields thus presents a powerful way to probe percolation phenomena in semiconductors with bound and resonant isoelectronic cluster states. DOI: 10.1103/PhysRevLett.110.156405

引用

页数：5

共 26 条

[1] Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs1-xNx alloys: The appearance of a mobility edge [J].