The pressure-temperature phase and transformation diagram for carbon; Updated through 1994

被引:545
作者
Bundy, FP
Bassett, WA
Weathers, MS
Hemley, RJ
Mao, HK
Goncharov, AF
机构
[1] CORNELL UNIV, DEPT GEOL SCI, ITHACA, NY 14853 USA
[2] CARNEGIE INST WASHINGTON, GEOPHYS LAB, WASHINGTON, DC 20015 USA
[3] CARNEGIE INST WASHINGTON, CTR HIGH PRESSURE RES, WASHINGTON, DC 20015 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/0008-6223(96)00170-4
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In recent years, important advances in our understanding of the pressure-temperature phase and transformation diagram for carbon have occurred as a result of developments in both experimental and theoretical techniques. Graphite, diamond, liquid and vapor remain the major thermodynamically stable forms of carbon. However, due to the high activation energies for solid-state transformations and the specific effects of reaction paths, other metastable forms and a wide spectrum of complex hybrid forms may be generated, and possibly quenched-in, to survive metastably. This paper focuses primarily on developments since the last review of the carbon phase diagram published in 1989, but also includes references to the reliable older work Some of the newer conclusions include the following: the Clapeyron slope of the diamond melting line, dT(m)/dP, is positive; the liquid is metallic and there appears to be no evidence for a transformation between electrically conducting and non-conducting forms; melted droplets of carbon less than 0.2 mu m in diameter quench to a giant fullerene structure even in the stability held of diamond; graphite transforms to a transparent phase on compression at room temperature; this phase reverts to graphite on decompression at this temperature from pressures as high as 100 GPa.
引用
收藏
页码:141 / 153
页数:13
相关论文
共 103 条
[1]   GROWTH OF DIAMOND SEED CRYSTALS BY VAPOR DEPOSITION [J].
ANGUS, JC ;
WILL, HA ;
STANKO, WS .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) :2915-&
[2]   CARBON - A NEW CRYSTALLINE PHASE [J].
AUST, RB ;
DRICKAMER, HG .
SCIENCE, 1963, 140 (356) :817-&
[3]  
Baitin A., 1990, High Temperatures - High Pressures, V22, P157
[4]  
BARYAM Y, 1992, MATER RES SOC SYMP P, V242, P335, DOI 10.1557/PROC-242-335
[5]  
BASSET MJ, 1939, J PHYS RADIUM, V10, P217
[6]  
BASSETT WA, 1993, P AIRAPT APS C COL S, P651
[7]  
BELL PM, 1986, 4 P AM PHYS SOC TOP, P125
[8]  
BERMAN R, 1955, Z ELEKTROCHEM, V59, P333
[9]   COMPLEX TETRAHEDRAL STRUCTURES OF SILICON AND CARBON UNDER PRESSURE [J].
BISWAS, R ;
MARTIN, RM ;
NEEDS, RJ ;
NIELSEN, OH .
PHYSICAL REVIEW B, 1984, 30 (06) :3210-3213
[10]   STABILITY AND ELECTRONIC-PROPERTIES OF COMPLEX STRUCTURES OF SILICON AND CARBON UNDER PRESSURE - DENSITY-FUNCTIONAL CALCULATIONS [J].
BISWAS, R ;
MARTIN, RM ;
NEEDS, RJ ;
NIELSEN, OH .
PHYSICAL REVIEW B, 1987, 35 (18) :9559-9568