Electromigration and thermomigration behavior of flip chip solder joints in high current density packages
被引:24
作者:
Yang, D.
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City Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong, Peoples R China
Yang, D.
[1
]
Chan, Y. C.
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City Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong, Peoples R China
Chan, Y. C.
[1
]
Wu, B. Y.
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City Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong, Peoples R ChinaCity Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong, Peoples R China
Wu, B. Y.
[1
]
Pecht, M.
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Univ Maryland, Ctr Adv Life Cycle Engn, College Pk, MD 20742 USACity Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong, Peoples R China
Pecht, M.
[2
]
机构:
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon Tong, Hong Kong, Peoples R China
[2] Univ Maryland, Ctr Adv Life Cycle Engn, College Pk, MD 20742 USA
The electromigration and thermomigration behavior of eutectic tin-lead flip chip solder joints, subjected to currents ranging from 1.6 to 2.0 A, at ambient temperatures above 100 degrees C, was experimentally and numerically studied. The temperature at the chip side was monitored using both a temperature coefficient of resistance method and a thermal infrared technique. The electron wind force and thermal gradient played the dominant role in accelerated atomic migration. The atomic flux of lead due to electromigration and thermomigration was estimated for comparison. At the current crowding region, electromigration induced a more serious void accumulation as compared with thermomigration. Also, because of different thermal dissipations, a morphological variation was detected at different cross-sectional planes of the solder joint during thermomigration.