Optical pulse generation in single section InAs/GaAs quantum dot edge emitting lasers under continuous wave operation

被引：31

作者：

Rosales, R. ^{[1
]}

Merghem, K. ^{[1
]}

Calo, C. ^{[1
]}

Bouwmans, G. ^{[2
]}

Krestnikov, I. ^{[3
]}

Martinez, A. ^{[1
]}

Ramdane, A. ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Univ Lille, CNRS, UMR8523, USR3380,IRCICA,PhLAM, F-59658 Villeneuve Dascq, France

[3] Innolume GmbH, D-44263 Dortmund, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

关键词：

LOCKED SEMICONDUCTOR-LASERS; MODE-LOCKING; LINEWIDTH; POWER;

D O I：

10.1063/1.4768946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Observation of sub-picosecond pulses from a single section Fabry Perot InAs/GaAs edge emitting quantum dot (QD) based laser at 1.3 mu m under continuous wave operation is reported. After group delay dispersion compensation, pulse durations as short as 770 fs in a 45 GHz repetition rate device have been measured, with 1.9W of peak power and a narrow radio frequency spectrum of only a few kHz linewidth. The experiments show evidence of an unexplored mode locking regime in the InAs/GaAs quantum dot material system, which still needs theoretical modelling and further analysis. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768946]

引用

页数：3

共 25 条

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