Optical pulse generation in single section InAs/GaAs quantum dot edge emitting lasers under continuous wave operation

被引：31
作者：
Rosales, R. [1 ]
Merghem, K. [1 ]
Calo, C. [1 ]
Bouwmans, G. [2 ]
Krestnikov, I. [3 ]
Martinez, A. [1 ]
Ramdane, A. [1 ]
机构：
[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[2] Univ Lille, CNRS, UMR8523, USR3380,IRCICA,PhLAM, F-59658 Villeneuve Dascq, France
[3] Innolume GmbH, D-44263 Dortmund, Germany
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期
关键词：
LOCKED SEMICONDUCTOR-LASERS; MODE-LOCKING; LINEWIDTH; POWER;
D O I：
10.1063/1.4768946
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Observation of sub-picosecond pulses from a single section Fabry Perot InAs/GaAs edge emitting quantum dot (QD) based laser at 1.3 mu m under continuous wave operation is reported. After group delay dispersion compensation, pulse durations as short as 770 fs in a 45 GHz repetition rate device have been measured, with 1.9W of peak power and a narrow radio frequency spectrum of only a few kHz linewidth. The experiments show evidence of an unexplored mode locking regime in the InAs/GaAs quantum dot material system, which still needs theoretical modelling and further analysis. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768946]
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页数：3
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