Optical pulse generation in single section InAs/GaAs quantum dot edge emitting lasers under continuous wave operation

被引：31

作者：

Rosales, R. ^{[1
]}

Merghem, K. ^{[1
]}

Calo, C. ^{[1
]}

Bouwmans, G. ^{[2
]}

Krestnikov, I. ^{[3
]}

Martinez, A. ^{[1
]}

Ramdane, A. ^{[1
]}

机构：

[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France

[2] Univ Lille, CNRS, UMR8523, USR3380,IRCICA,PhLAM, F-59658 Villeneuve Dascq, France

[3] Innolume GmbH, D-44263 Dortmund, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

关键词：

LOCKED SEMICONDUCTOR-LASERS; MODE-LOCKING; LINEWIDTH; POWER;

D O I：

10.1063/1.4768946

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Observation of sub-picosecond pulses from a single section Fabry Perot InAs/GaAs edge emitting quantum dot (QD) based laser at 1.3 mu m under continuous wave operation is reported. After group delay dispersion compensation, pulse durations as short as 770 fs in a 45 GHz repetition rate device have been measured, with 1.9W of peak power and a narrow radio frequency spectrum of only a few kHz linewidth. The experiments show evidence of an unexplored mode locking regime in the InAs/GaAs quantum dot material system, which still needs theoretical modelling and further analysis. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768946]

引用

页数：3

共 25 条

[1] Monolithic and multi-GigaHertz mode-locked semiconductor lasers: Constructions, experiments, models and applications [J].

Avrutin, EA ;

Marsh, JH ;

Portnoi, EL .

IEE PROCEEDINGS-OPTOELECTRONICS, 2000, 147 (04) :251-278

[2] Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy [J].

Chen, Rui ;

Liu, H. Y. ;

Sun, H. D. .

JOURNAL OF APPLIED PHYSICS, 2010, 107 (01)

[3] Suppression of Q-switching instabilities of passively modelocked semiconductor lasers by a passive electrical circuit [J].

Drzewietzki, L. ;

Breuer, S. ;

Elsaesser, W. .

ELECTRONICS LETTERS, 2011, 47 (17) :988-U71

[4] Subpicosecond pulse generation at 134 GHz using a quantum-dash-based Fabry-Perot laser emitting at 1.56 μm [J].

Gosset, C. ;

Merghem, K. ;

Martinez, A. ;

Moreau, G. ;

Patriarche, G. ;

Aubin, G. ;

Ramdane, A. ;

Landreau, J. ;

Lelarge, F. .

APPLIED PHYSICS LETTERS, 2006, 88 (24)

[5] Mode-locking of lasers [J].

Haus, HA .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2000, 6 (06) :1173-1185

[6] RF linewidth in monolithic passively mode-locked semiconductor laser [J].

Kefelian, Fabien ;

O'Donoghue, Shane ;

Todaro, Maria Teresa ;

McInerney, John G. ;

Huyet, Guillaume .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (13-16) :1405-1407

[7] 312-fs pulse generation from a passive C-band InAs/InP quantum dot mode-locked laser [J].

Lu, Z. G. ;

Liu, J. R. ;

Raymond, S. ;

Poole, P. J. ;

Barrios, P. J. ;

Poitras, D. .

OPTICS EXPRESS, 2008, 16 (14) :10835-10840

[8] Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm [J].

Malins, D. B. ;

Gomez-Iglesias, A. ;

White, S. J. ;

Sibbett, W. ;

Miller, A. ;

Rafailov, E. U. .

APPLIED PHYSICS LETTERS, 2006, 89 (17)

[9] Pulse generation at 346 GHz using a passively mode locked quantum-dash-based laser at 1.55 μm [J].

Merghem, K. ;

Akrout, A. ;

Martinez, A. ;

Aubin, G. ;

Ramdane, A. ;

Lelarge, F. ;

Duan, G. -H. .

APPLIED PHYSICS LETTERS, 2009, 94 (02)

[10]

Murdoch SG, 2011, OPT EXPRESS, V19, P13628, DOI [10.1364/OE.19.013628, 10.1364/OE.19.013618]

← 1 2 3 →