Effects of hydrogen atmosphere on pulsed-DC sputtered nanocrystalline Si:H films

被引：3

作者：

Cherng, J. S. ^{[1
,2
]}

Chang, S. H. ^{[1
]}

Hong, S. H. ^{[1
]}

机构：

[1] Mingchi Univ Technol, Dept Mat Engn, Taipei 24301, Taiwan

[2] Mingchi Univ Technol, Ctr Thin Film Technol & Applicat, Taipei 24301, Taiwan

来源：

MATERIALS RESEARCH BULLETIN | 2012年 / 47卷 / 10期

关键词：

nc-Si:H films; Pulsed-DC sputtering; GIXRD; C. Raman spectroscopy; SILICON THIN-FILMS; CRYSTALLINE; GROWTH; GLASS; DEPOSITION; RESONANCE;

D O I：

10.1016/j.materresbull.2012.04.108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated nanocrystalline silicon (nc-Si:H) films were prepared by a pulsed-DC magnetron sputtering method under an atmosphere of hydrogen/argon mixture. The effects of hydrogen concentration on the structural and electrical properties of the films were systematically investigated using grazing incidence X-ray diffraction (GIXRD), Raman spectroscopy, and conductivity measurement. A threshold hydrogen concentration of about 70% was found necessary before any crystallinity was detectable. The deposition rate decreased monotonically with increasing hydrogen concentration, while the conductivity varied with crystallite size. The abnormally low conductivity level of these nc-Si:H films was due to the extraordinarily high defect density, which was attributed both to the enhanced ion bombardment from the pulsed-DC plasma and to the oxygen contamination from the target. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：3036 / 3039

页数：4

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