High resolution, high bandwidth global shutter CMOS area scan sensors

被引:0
作者
Faramarzpour, Naser [1 ]
Sonder, Matthias [1 ]
Li, Binqiao [1 ]
机构
[1] Teledyne DALSA, Waterloo, ON N2V 2E9, Canada
来源
SENSORS, SYSTEMS, AND NEXT-GENERATION SATELLITES XVII | 2013年 / 8889卷
关键词
Global shutter; CMOS; PPD; LVDS; 5T; ACTIVE PIXEL; NOISE;
D O I
10.1117/12.2030682
中图分类号
V [航空、航天];
学科分类号
08 ; 0825 ;
摘要
Global shuttering, sometimes also known as electronic shuttering, enables the use of CMOS sensors in a vast range of applications. Teledyne DALSA Global shutter sensors are able to integrate light synchronously across millions of pixels with microsecond accuracy. Teledyne DALSA offers 5 transistor global shutter pixels in variety of resolutions, pitches and noise and full-well combinations. One of the recent generations of these pixels is implemented in 12 mega pixel area scan device at 6 um pitch and that images up to 70 frames per second with 58 dB dynamic range. These square pixels include microlens and optional color filters. These sensors also offer exposure control, anti-blooming and high dynamic range operation by introduction of a drain and a PPD reset gate to the pixel. The state of the art sense node design of Teledyne DALSA's 5T pixel offers exceptional shutter rejection ratio. The architecture is consistent with the requirements to use stitching to achieve very large area scan devices. Parallel or serial digital output is provided on these sensors using on-chip, column-wise analog to digital converters. Flexible ADC bit depth combined with windowing (adjustable region of interest, ROI) allows these sensors to run with variety of resolution/bandwidth combinations. The low power, state of the art LVDS I/O technology allows for overall power consumptions of less than 2W at full performance conditions.
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页数:6
相关论文
共 5 条
[1]   CMOS image sensors [J].
El Gamal, A ;
Eltoukhy, H .
IEEE CIRCUITS & DEVICES, 2005, 21 (03) :6-20
[2]   CMOS-Based active pixel for low-light-level detection: Analysis and measurements [J].
Faramarzpour, Naser ;
Deen, M. Jamal ;
Shirani, Shahram ;
Fang, Qiyin ;
Liu, Louis W. C. ;
de Souza Campos, Fernando ;
Swart, Jacobus W. .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) :3229-3237
[3]   An approach to improve the signal-to-noise ratio of active pixel sensor for low-light-level applications [J].
Faramarzpour, Naser ;
Deen, M. Jamal ;
Shirani, Shahram .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :2384-2391
[4]   CCD or CMOS image sensors for consumer digital still photography? [J].
Theuwissen, AJP .
2001 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS, AND APPLICATIONS, PROCEEDINGS OF TECHNICAL PAPERS, 2001, :168-171
[5]   Analysis of temporal noise in CMOS photodiode active pixel sensor [J].
Tian, H ;
Fowler, B ;
Gamal, AF .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (01) :92-101