Down-conversion properties of luminescent silicon nanostructures formed and passivated in HNO3-based solutions

被引：16
作者：
González-Díaz, B.
Guerrero-Lemus, R.
Haro-González, P.
Borchert, D.
Hernández-Rodríguez, C.
机构：
[1] Univ La Laguna, Dept Fis Basica, San Cristobal la Laguna 38204, SC Tenerife, Spain
[2] Fraunhofer Inst, Inst Solar Energiesyst, D-45884 Gelsenkirchen, Germany
来源：
THIN SOLID FILMS | 2006年 / 511卷
关键词：
silicon; nanostructures; stain etching; down-conversion; photoluminescene; lifetime;
D O I：
10.1016/j.tsf.2005.12.129
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, photoluminescent porous silicon (PS) stain etched and passivated by means of oxidation in HNO3/H2SO4 or HNO3/H2O2 solutions has been studied. These passivation methods have preserved the PS photoluminescence and also have increased the photocarriers' lifetime, which are required for efficient down-conversion properties. The samples have been characterized by Fourier transform infrared spectroscopy, spectrofluorometry and microwave photoconduction decay. The results show that the photocarriers lifetime and the photoluminescence values are sensitively dependent on the evolution of the Si-H, Si-O and O-H bonds. (c) 2005 Elsevier B.V All rights reserved.
引用
收藏
页码：473 / 477
页数：5
相关论文
共 14 条
[1]   Formation and characterization of porous silicon layers for application in multicrystalline silicon solar cells [J].
Bastide, S ;
Albu-Yaron, A ;
Strehlke, S ;
Lévy-Clément, C .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1999, 57 (04) :393-417
[2]  
Canham L. T., 1997, PROPERTIES POROUS SI, P23
[3]  
Guerrero-Lemus R, 2003, MATER RES SOC SYMP P, V762, P753
[4]   Optical and compositional characterisation of stain-etched porous silicon subjected to anodic oxidation and thermal treatments [J].
Guerrero-Lemus, R ;
Ben-Hander, F ;
Hernández-Rodríguez, C ;
Martínez-Duart, JM .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 101 (1-3) :249-254
[5]   Photoluminescence and AFM characterisation of the initial stages of porous silicon stain etching [J].
Guerrero-Lemus, R ;
Ben-Hander, FA ;
Vázquez, L ;
Hernández-Rodríguez, C ;
Martínez-Duart, JM .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 197 (02) :409-413
[6]   Compositional and photoluminescent properties of anodically and stain etched porous silicon [J].
Guerrero-Lemus, R ;
Ben-Hander, FA ;
Fierro, JLG ;
Hernández-Rodríguez, C ;
Martínez-Duart, JM .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 197 (01) :137-143
[7]   Anodic and optical characterisation of stain-etched porous silicon antireflection coatings [J].
Guerrero-Lemus, R ;
Hernández-Rodríguez, C ;
Ben-Hander, F ;
Martínez-Duart, JM .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2002, 72 (1-4) :495-501
[8]   An application of Raman spectroscopy on the measurement of residual stress in porous silicon [J].
Kang, YL ;
Qiu, Y ;
Lei, ZK ;
Hu, M .
OPTICS AND LASERS IN ENGINEERING, 2005, 43 (08) :847-855
[9]   DISORDER IN VITREOUS SIO2 - THE EFFECT OF THERMAL ANNEALING ON STRUCTURAL-PROPERTIES [J].
LANGE, P ;
SCHNAKENBERG, U ;
ULLERICH, S ;
SCHLIWINSKI, HJ .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3532-3537
[10]   CHARACTERIZATION OF STAIN-ETCHED POROUS SILICON [J].
LIU, S ;
PALSULE, C ;
YI, S ;
GANGOPADHYAY, S .
PHYSICAL REVIEW B, 1994, 49 (15) :10318-10325
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