Structural, compositional, thermoelectrical and photoelectrochemical properties of CdSe thin films

被引：7
作者：
Chate, P. A. [1 ]
Sathe, D. J. [2 ]
Hankare, P. P. [3 ]
Sankpal, U. B. [4 ]
机构：
[1] JSM Coll, Dept Chem, Alibag, MS, India
[2] KITs Engn Coll, Dept Chem, Kolhapur, MS, India
[3] Shivaji Univ, Dept Chem, Kolhapur 416004, MS, India
[4] RP Gogate Coll, Ratnagiri, MS, India
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 06期
关键词：
CHEMICALLY DEPOSITED CDSE; THICKNESS-DEPENDENT PROPERTIES; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; BATH DEPOSITION; QUANTUM DOTS; CELLS; GROWTH; ROUTE;
D O I：
10.1007/s10854-012-1048-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cadmium selenide thin films have been deposited on non-conducting glass and stainless steel substrates. Films were characterized by X-ray diffraction, atomic absorption spectroscopy. The electrical and thermoelectrical properties also studied. The X-ray diffraction analysis shows that the film samples are in cubic crystal structure. Film was found to be cadmium deficient. The efficiency of photoelectrode was found to be 1.15 % using sulphide-polysulphide electrolyte.
引用
收藏
页码：2000 / 2004
页数：5
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