In this communication, we demonstrate experimentally a new design for all-optical AND and NAND gates operating in the GHz regime using the cross-polarization modulation effect in a semiconductor optical amplifier. The efficiency of this effect was estimated by measuring the conversion coefficients indicating the TE to TM mode conversion and vice versa when the amplifier is perturbed with a wavelength tunable control beam. The all-optical gates here described differ from other ones developed before using semiconductor optical amplifiers by their ability to operate on non-degenerate input signals with an output signal wavelength independent of the input signals wavelength.