Properties of photoluminescence in type-II ZnTe/ZnSe quantum dots

被引：10
|
作者：
Lin, TY [1 ]
Lyu, DY
Chang, J
Shen, JL
Chou, WC
机构：
[1] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Chilung 202, Taiwan
[2] Chung Yuan Christian Univ, Dept Phys, Chungli 32023, Taiwan
[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期
关键词：
D O I：
10.1063/1.2189029
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Temperature and time evolution of the photoluminescence (PL) intensity of bimodal ZnTe/ZnSe type-II quantum dots (QDs) were investigated. A particular temperature dependence of PL was observed in large QDs. PL decay of small QDs is composed of a faster initial component and a slower tail component whereas PL decay of large QDs simply comprises a fast component. All phenomena could be understood consistently by considering charge carrier transfer mechanism, band-bending effect, and the existence of nonradiative centers in the bimodal type-II QD array. We show that excitons play an important role in the emission properties of a self-assembled type-II QD system.
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页数：3
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