Radiation effects on II-VI compound-based detectors

被引:36
|
作者
Cavallini, A
Fraboni, B
Dusi, W
Auricchio, N
Chirco, P
Zanarini, M
Siffert, P
Fougeres, P
机构
[1] INFM, Bologna, Italy
[2] Univ Bologna, Dipartmento Fis, Bologna, Italy
[3] CNR, Ist Tesre, I-40126 Bologna, Italy
[4] CNRS, Lab PHASE, F-67037 Strasbourg, France
[5] EURORAD 2 6, F-67037 Strasbourg, France
来源
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2002年 / 476卷 / 03期
关键词
D O I
10.1016/S0168-9002(01)01674-6
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The performance of room temperature CdTe and CdZnTe detectors exposed to a radiation source can be strongly altered by the interaction of the ionizing particles and the material. Up to now, few experimental data are available on the response of II-VI compound detectors to different types of radiation sources. We have carried out a thorough investigation on the effects of gamma-rays, neutrons and electron irradiation both on CdTe : Cl and Cd0.9Zn0.1 Te detectors. We have studied the detector response after radiation exposure by means of dark current measurements and of quantitative spectroscopic analyses at low and medium energies. The deep traps present in the material have been characterized by means of PICTS (photo-induced current transient spectroscopy) analyses, which allow to determine the trap apparent activation energy and capture cross-section. The evolution of the trap parameters with increasing irradiation doses has been monitored for all the different types of radiation sources. A comparison of the results obtained for CdTe : Cl and Cd0.9Zn0.1 Te detectors allows to deepen our understanding of the detectors' properties and performance. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:770 / 778
页数:9
相关论文
共 50 条
  • [21] TELLURIUM-BASED II-VI COMPOUND SEMICONDUCTORS AND HETEROSTRUCTURES UNDER STRAIN
    GIL, B
    DUNSTAN, DJ
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (06) : 428 - 438
  • [22] Application of wide gap II-VI compounds as emitters and detectors
    Faschinger, W
    Spahn, W
    Nurnberger, J
    Gerhard, A
    Korn, M
    Schull, K
    Albert, D
    Ress, H
    Ebel, R
    Schmitt, R
    Olszowi, B
    Ehinger, M
    Landwehr, G
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1997, 202 (02): : 695 - 706
  • [23] GaSb-based II-VI semiconductors for application in next generation infrared detectors
    Lei, Wen
    Ren, Yongling
    Madni, Imtiaz
    Gu, Renjie
    Umana-Membreno, Gilberto A.
    Antoszewski, Jarek
    Faraone, Lorenzo
    2018 IEEE RESEARCH AND APPLICATIONS OF PHOTONICS IN DEFENSE CONFERENCE (RAPID), 2018, : 19 - 22
  • [24] Hyperfine interactions and magnetism of 3d transition-metal-impurities in II-VI and III-V compound-based diluted magnetic semiconductors
    Sato, K
    Katayama-Yoshida, H
    HYPERFINE INTERACTIONS, 2001, 136 (3-8): : 737 - 742
  • [25] OPTIMIZATION OF II-VI BASED HETEROJUNCTIONS
    LOFERSKI, JJ
    SOLID-STATE ELECTRONICS, 1987, 30 (11) : 1205 - 1213
  • [26] Direct synthesis of II-VI compound nanocrystals in polymer matrix
    Antolini, F.
    Di Luccio, T.
    Laera, A. M.
    Mirenghi, L.
    Piscopiello, E.
    Re, M.
    Tapfer, L.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (08): : 2768 - 2781
  • [28] Atomic-Scale Characterization of II-VI Compound Semiconductors
    Smith, David J.
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (11) : 3168 - 3174
  • [29] AN ELECTROCHEMICAL STUDY OF CATHODIC DEPOSITION OF II-VI COMPOUND SEMICONDUCTORS
    TSENG, ES
    BASOL, BM
    KAPUR, VK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C114 - C114
  • [30] Electrochemical atomic layer epitaxy of II-VI compound semiconductors
    Fan, Yuwei
    Li, Yongxiang
    Wu, Chongruo
    Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 1998, 18 (04): : 302 - 307