Impact of source pocket doping on RF and linearity performance of a cylindrical gate tunnel FET

The paper presents a cylindrical gate tunnel (CGT) field effect transistors (FETs) with a highly doped pocket layer introduced in the source region. The presence of pocket doped layer in the source provides higher lateral electric field and band-to-band tunneling (BTBT) generation rate in the vicinity of tunneling junction which in turn increases the drain current and transconductance significantly. Also, the linearity and radio frequency (RF) performance of the CGT FET with source pocket doping (CGTS) have been extensively investigated. The different linearity and RF figure of merits such as g(mn), VIP2, VIP3, IIP3, ZCP, 1-dB compression point, GBWP, TFP, unity gain cut-off frequency, and maximum oscillation frequency of the present device are extracted and compared with the results of conventional CGT. The results exhibit superior linearity and RF performance along with improved current carrying capability of the proposed device. Thus, the device can be one of the possible contenders to replace bulk MOSFET in high-frequency microwave applications. The accuracy of both the devices is validated by TCAD Sentaurus simulator.