Advanced DC-SF Cell Technology for 3-D NAND Flash

被引：14

作者：

Aritome, Seiichi ^{[1
,2
]}

Noh, Yoohyun ^{[1
]}

Yoo, Hyunseung ^{[1
]}

Choi, Eun Seok ^{[1
]}

Joo, Han Soo ^{[1
]}

Ahn, Youngsoo ^{[1
]}

Han, Byeongil ^{[1
]}

Chung, Sungjae ^{[1
]}

Shim, Keonsoo ^{[1
]}

Lee, Keunwoo ^{[1
]}

Kwak, Sanghyon ^{[1
]}

Shin, Sungchul ^{[1
]}

Choi, Iksoo ^{[1
]}

Nam, Sanghyuk ^{[1
]}

Cho, Gyuseog ^{[1
]}

Sheen, Dongsun ^{[1
]}

Pyi, Seungho ^{[1
]}

Choi, Jongmoo ^{[1
]}

Park, Sungkye ^{[1
]}

Kim, Jinwoong ^{[1
]}

Lee, Seokkiu ^{[1
]}

Hong, Sungjoo ^{[1
]}

Park, Sungwook ^{[1
]}

Kikkawa, Takamaro ^{[2
]}

机构：

[1] SK Hynix Inc, R&D Div, Ichon 467701, South Korea

[2] Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Grad Sch Adv Sci Matter, Higashihiroshima 7398527, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 04期

关键词：

Floating gate; NAND Flash; nonvolatile memory; 3-D cell;

D O I：

10.1109/TED.2013.2247606

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advanced dual control gate with surrounding floating gate (DC-SF) cell process and operation schemes are successfully developed for 3-D NAND flash memories. To improve performance and reliability of DC-SF cell, new metal control gate last (MCGL) process is developed. The MCGL process can realize a low resistive tungsten (W) metal wordline, a low damage on tunnel oxide/inter-poly dielectric (IPD), and a preferable floating gate (FG) shape. Also, new read and program operation schemes are developed. In the new read operation, the higher and lower Vpass-read are alternately applied to unselected control gates to compensate lowering FG potential to be a pass transistor. In the new program scheme, the optimized Vpass are applied to neighbor WL of selected WL to prevent program disturb and charge loss through IPD. Thus, by using the MCGL process and new read/program schemes, the high performance and reliability of the DC-SF cell can be realized for 3-D NAND flash memories.

引用

页码：1327 / 1333

页数：7

共 50 条

[21] Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory
Kumari, Preeti
Surendranathan, Umeshwarnath
Wasiolek, Maryla
Hattar, Khalid
Bhat, Narayana P.
Ray, Biswajit
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2021, 68 (05) : 1032 - 1039
[22] 3D-NAND flash memory based neuromorphic computing
Chen Yang-Yang
He Yu-Hui
Miao Xiang-Shui
Yang Duo-Hong
ACTA PHYSICA SINICA, 2022, 71 (21)
[23] Total Ionizing Dose Effects in Advanced 28 nm Charge Trapping 3D NAND Flash Memory
Zheng, Xuesong
Wang, Yuhang
Mo, Rigen
Liu, Chaoming
Wang, Tianqi
Huo, Mingxue
Xiao, Liyi
ELECTRONICS, 2025, 14 (03):
[24] Near-Free Lifetime Extension for 3-D <sc>nand</sc> Flash via Opportunistic Self-Healing
Ren, Tianyu
Li, Qiao
Lv, Yina
Ye, Min
Guan, Nan
Jason Xue, Chun
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2024, 43 (11) : 4226 - 4237
[25] Suppression of Read Disturb Fail Caused by Boosting Hot Carrier Injection Effect for 3-D Stack NAND Flash Memories
Choe, Byeong-In
Lee, Jung-Kyu
Park, Byung-Gook
Lee, Jong-Ho
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (01) : 42 - 44
[26] Floating gate technology for high performance 8-level 3-bit NAND flash memory
Kim, Tae-Kyung
Chang, Sungnam
Choi, Jeong-Hyuk
SOLID-STATE ELECTRONICS, 2009, 53 (07) : 792 - 797
[27] Highly Scalable 3-D Vertical FG NAND Cell Arrays Using the Sidewall Control Pillar (SCP)
Seo, Moon-Sik
Choi, Jong-Moo
Park, Sung-kye
Endoh, Tetsuo
2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW), 2012,
[28] Exploiting Binary Equilibrium for Efficient LDPC Decoding in 3D NAND Flash
Hsu, Hsiang-Sen
Chang, Li-Pin
2022 IEEE 28TH INTERNATIONAL CONFERENCE ON EMBEDDED AND REAL-TIME COMPUTING SYSTEMS AND APPLICATIONS (RTCSA 2022), 2022, : 113 - 119
[29] Future Prospects of NAND Flash Memory Technology-The Evolution from Floating Gate to Charge Trapping to 3D Stacking
Lu, Chih-Yuan
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (10) : 7604 - 7618
[30] Mixed-Field Radiation of 3-D MLC Flash Memories for Space Applications
Gonzales, Lorenzo
Danzeca, Salvatore
Fiore, Salvatore
Kramberger, Iztok
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2024, 71 (11) : 2400 - 2408

← 1 2 3 4 5 →