Single Event Upset Characterization of the Zynq UltraScale plus MPSoC Using Proton Irradiation

被引：0

作者：

Hiemstra, David M. ^{[1
]}

Kirischian, Valeri ^{[1
]}

Brelski, Jakub ^{[1
]}

机构：

[1] MDA, Brampton, ON L6S 4J3, Canada

来源：

2017 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2017年

关键词：

single event upset; SRAM FPGA; proton irradiation; Zynq UltraScale; MPSoC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Zynq UltraScale+ MPSOC are presented. Upset rates in the space radiation environment are estimated.

引用

页码：135 / 138

页数：4

共 50 条

[31] Proton induced single event upset in 6 T SOISRAMs [J].

Liu, Harry Y. ;

Liu, Michael S. ;

Hughes, Harold L. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3502-3505

[32] Simulation of the characteristics of low-energy proton induced single event upset [J].

Geng Chao ;

Xi Kai ;

Liu TianQi ;

Liu Jie .

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2014, 57 (10) :1902-1906

[33] Simulation of the characteristics of low-energy proton induced single event upset [J].

GENG Chao ;

XI Kai ;

LIU TianQi ;

LIU Jie .

Science China(Physics,Mechanics & Astronomy), 2014, (10) :1902-1906

[34] Single event upset test of low energy proton on 65 nm SRAM [J].

He, An-Lin ;

Guo, Gang ;

Chen, Li ;

Shen, Dong-Jun ;

Ren, Yi ;

Liu, Jian-Cheng ;

Zhang, Zhi-Chao ;

Cai, Li ;

Shi, Shu-Ting ;

Wang, Hui ;

Fan, Hui ;

Gao, Li-Juan ;

Kong, Fu-Quan .

Yuanzineng Kexue Jishu/Atomic Energy Science and Technology, 2014, 48 (12) :2364-2369

[35] Simulation of the characteristics of low-energy proton induced single event upset [J].

Chao Geng ;

Kai Xi ;

TianQi Liu ;

Jie Liu .

Science China Physics, Mechanics & Astronomy, 2014, 57 :1902-1906

[36] Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation [J].

Xiao Yao ;

Guo Hong-Xia ;

Zhang Feng-Qi ;

Zhao Wen ;

Wang Yan-Ping ;

Zhang Ke-Ying ;

Ding Li-Li ;

Fan Xue ;

Luo Yin-Hong ;

Wang Yuan-Ming .

CHINESE PHYSICS B, 2014, 23 (11)

[37] Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation [J].

肖尧 ;

郭红霞 ;

张凤祁 ;

赵雯 ;

王燕萍 ;

张科营 ;

丁李利 ;

范雪 ;

罗尹虹 ;

王园明 .

Chinese Physics B, 2014, (11) :616-619

[38] Single Event Effect Evaluation of the Jetson AGX Xavier Module Using Proton Irradiation [J].

Hiemstra, D. M. ;

Jin, C. ;

Li, Z. ;

Chen, R. ;

Shi, S. ;

Chen, L. .

2020 IEEE RADIATION EFFECTS DATA WORKSHOP (IN CONJUNCTION WITH 2020 NSREC), 2020, :31-34

[39] Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell [J].

叶兵 ;

刘杰 ;

王铁山 ;

刘天奇 ;

罗捷 ;

王斌 ;

殷亚楠 ;

姬庆刚 ;

胡培培 ;

孙友梅 ;

侯明东 .

Chinese Physics B, 2017, 26 (08) :540-545

[40] Impact of energy straggle on proton-induced single event upset test in a 65-nm SRAM cell [J].

Ye, Bing ;

Liu, Jie ;

Wang, Tie-Shan ;

Liu, Tian-Qi ;

Luo, Jie ;

Wang, Bin ;

Yin, Ya-Nan ;

Ji, Qing-Gang ;

Hu, Pei-Pei ;

Sun, You-Mei ;

Hou, Ming-Dong .

CHINESE PHYSICS B, 2017, 26 (08)

← 1 2 3 4 5 →