Single Event Upset Characterization of the Zynq UltraScale plus MPSoC Using Proton Irradiation

被引：0

作者：

Hiemstra, David M. ^{[1
]}

Kirischian, Valeri ^{[1
]}

Brelski, Jakub ^{[1
]}

机构：

[1] MDA, Brampton, ON L6S 4J3, Canada

来源：

2017 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2017年

关键词：

single event upset; SRAM FPGA; proton irradiation; Zynq UltraScale; MPSoC;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Proton induced SEU cross-sections of the SRAM which stores the logic configuration and certain functional blocks of the Zynq UltraScale+ MPSOC are presented. Upset rates in the space radiation environment are estimated.

引用

页码：135 / 138

页数：4

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