Silicon surface texturing with a combination of potassium hydroxide and tetra-methyl ammonium hydroxide etching

被引：6

作者：

Sridharan, Sindhuja ^{[1
]}

Bhat, Navakanta ^{[1
]}

Bhat, K. N. ^{[1
]}

机构：

[1] Indian Inst Sci, Dept Elect Commun Engn, Ctr Nano Sci & Engn CeNSE, Bangalore 560012, Karnataka, India

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 02期

关键词：

SOLAR-CELLS; TMAH;

D O I：

10.1063/1.4776733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A two step silicon surface texturing, consisting of potassium hydroxide (KOH) etching followed by tetra-methyl ammonium hydroxide etching is presented. This combined texturing results in 13.8% reflectivity at 600 nm compared to 16.1% reflectivity for KOH etching due to the modification of microstructure of etched pyramids. This combined etching also results in significantly lower flat-band voltage (V-FB) (-0.19V compared to -1.3 V) and interface trap density (D-it) (2.13 x 10(12) cm(-2) eV(-1) compared to 3.2 x 10(12) cm(-2) eV(-1)). (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4776733]

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页数：4

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