Undoped InSb schottky detector for gamma-ray measurements

被引:9
作者
Hishiki, S [1 ]
Kanno, L
Sugiura, O
Xiang, RF
Nakamura, T
Katagiri, M
机构
[1] Kyoto Univ, Grad Sch Engn, Sakyo Ku, Kyoto 6068501, Japan
[2] Tokyo Inst Technol, Grad Sch Sci & Engn, Meguro Ku, Tokyo 1528552, Japan
[3] Japan Atom Energy Res Inst, Tokai, Ibaraki 3191195, Japan
关键词
cryogenic detector; depletion layer thickness; gamma-ray; InSb; low temperature; semiconductor detector; Schottky barrier height;
D O I
10.1109/TNS.2006.869817
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For measuring X-rays and gamma-rays with better energy resolution and higher efficiency than conventional semiconductor detectors such as Si and Ge detectors, we are studying InSb radiation detectors. Previously, we fabricated p-InSb Schottky type, pn-junction type detectors, and undoped InSb Schottky type detectors with an electrode of 3 mm in diameter, and measured alpha particles of Am-241. For measuring gamma-rays, we fabricated undoped InSb Schottky type detectors with smaller electrode areas. Gamma-ray signals were clearly separated from the background, and differences between energy spectra of Am-241 and Ba-133 gamma-rays were observed.
引用
收藏
页码:3172 / 3175
页数:4
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