Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

被引：10

作者：

Kil, Yeon-Ho ^{[1
]}

Yang, Jong-Han ^{[1
]}

Kang, Sukil ^{[1
]}

Jeong, Tae Soo ^{[1
]}

Kim, Taek Sung ^{[1
]}

Shim, Kyu-Hwan ^{[1
]}

机构：

[1] Chonnam Natl Univ, Semicond Phys Res Ctr, Kwangju, South Korea

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2013年 / 13卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Selective etching; SiGe; Si; multi-layer; SON; ELECTRON-BEAM LITHOGRAPHY; ON-NOTHING SON; SIGE ALLOYS; SI1-XGEX; FABRICATION; LAYERS; MOSFET; GE;

D O I：

10.5573/JSTS.2013.13.6.668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp H2O2 (30%) and 3 vp CH3COOH (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of Si0.8Ge0.2 layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

引用

页码：668 / 675

页数：8

共 30 条

[1]

Bernstein K., 2002, SOI CIRCUIT DESIGN C

[2]

Bluel M., 1995, ELECTRON LETT, V31, P1201

[3]

Borel S., 2000, IEEE T ELECTRON DEV, V47, P2179

[4]

CARNS TK, 1995, J ELECTROCHEM SOC, V142, P1260, DOI 10.1149/1.2044161

[5] Growth and modification of thin a-Si: H/a-Ge: H bi-layers to sacrificial c-SiGe alloys through ArF-Excimer laser assisted processing [J].

Chiussi, S. ;

Gontad, F. ;

Rodriguez, R. ;

Serra, C. ;

Serra, J. ;

Leon, B. ;

Sulima, T. ;

Hoellt, L. ;

Eisele, I. .

APPLIED SURFACE SCIENCE, 2008, 254 (19) :6030-6033

[6] In-plane silicon-on-nothing nanometer-scale resonant suspended gate MOSFET for In-IC integration perspectives [J].

Durand, C. ;

Casset, F. ;

Renaux, P. ;

Abele, N. ;

Legrand, B. ;

Renaud, D. ;

Ollier, E. ;

Ancey, P. ;

Ionescu, A. M. ;

Buchaillot, L. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) :494-496

[7] A SI0.7GE0.3 STRAINED-LAYER ETCH STOP FOR THE GENERATION OF THIN-LAYER UNDOPED SILICON [J].

GODBEY, D ;

HUGHES, H ;

KUB, F ;

TWIGG, M ;

PALKUTI, L ;

LEONOV, P ;

WANG, J .

APPLIED PHYSICS LETTERS, 1990, 56 (04) :373-375

[8] SELECTIVE REMOVAL OF SI1-XGEX FROM (100)-SI USING HNO3 AND HF [J].

GODBEY, DJ ;

KRIST, AH ;

HOBART, KD ;

TWIGG, ME .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (10) :2943-2947

[9]

Hanison S., 2003, EL DEV M IEDM 03 IEE, P18

[10] Wet Chemical Etching of Si, Si1-xGex, and Ge in HF:H2O2:CH3COOH [J].

Hollaender, B. ;

Buca, D. ;

Mantl, S. ;

Hartmann, J. M. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (06) :H643-H646

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