Interband and intraband relaxation dynamics in InSb based quantum wells

被引:6
作者
Bhowmick, M. [1 ]
Khodaparast, G. A. [1 ]
Mishima, T. D. [2 ]
Santos, M. B. [2 ]
Saha, D. [3 ]
Sanders, G. [3 ]
Stanton, C. J. [3 ]
机构
[1] Virginia Tech, Dept Phys, Blacksburg, VA 24061 USA
[2] Univ Oklahoma, Homer L Dodge Dept Phys & Astron, Norman, OK 73019 USA
[3] Univ Florida, Dept Phys, Gainesville, FL 32611 USA
基金
美国国家科学基金会;
关键词
SEMICONDUCTORS; PROBE; SPECTROSCOPY; CARRIERS;
D O I
10.1063/1.4971347
中图分类号
O59 [应用物理学];
学科分类号
摘要
We utilize pump/probe spectroscopy to determine the interband and intraband relaxation dynamics in InSb based quantum wells. Using non-degenerate pump/probe techniques, we observed several time scales for relaxation. One time scale tau(3) ranging from 2 ps to 5 ps is due to the intraband relaxation dynamics. Here, both the emission of LO phonons (within the Gamma valley) and carrier scattering between the X, L, and Gamma valleys contribute to the relaxation. An observed longer relaxation time, tau(2) approximate to 20 ps, is attributed to electron-hole recombination across the gap (the interband relaxation time). Finally, using a mid-infrared (MIR) degenerate pump/probe scheme, we observed a very fast relaxation time of similar to 1 ps, which is due to the saturation of the band-to-band absorption. Our results are important for developing concepts for InSb devices operating in the THz or MIR optical ranges with the endless need for faster response. Published by AIP Publishing.
引用
收藏
页数:7
相关论文
共 50 条
  • [1] Bastard G., 1988, Wave Mechanics Applied to Semiconductor Heterostructures
  • [2] Time-resolved differential transmission in MOVPE-grown ferromagnetic InMnAs
    Bhowmick, M.
    Merritt, T. R.
    Khodaparast, G. A.
    Wessels, Bruce W.
    McGill, Stephen A.
    Saha, D.
    Pan, X.
    Sanders, G. D.
    Stanton, C. J.
    [J]. PHYSICAL REVIEW B, 2012, 85 (12)
  • [3] Probe of Interband Relaxations of Photo-excited Carriers and Spins in InSb Based Quantum Wells
    Bhowmick, M.
    Kini, R. N.
    Nontapot, K.
    Goel, N.
    Chung, S. J.
    Mishima, T. D.
    Santos, M. B.
    Khodaparast, G. A.
    [J]. PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND SYSTEMS, 2010, 3 (02): : 1161 - 1165
  • [4] Carrier Dynamics in Parabolic InSb Based Multi Quantum Wells
    Bhowmick, Mithun
    Merritt, Travis
    Nontapot, Kanokwan
    Khodaparast, Giti A.
    Mishima, Tetsuya D.
    Santos, Michael B.
    [J]. 15TH INTERNATIONAL CONFERENCE ON NARROW GAP SYSTEMS (NGS15), 2011, 1416 : 192 - 195
  • [5] Coherent terahertz emission from optically pumped intersubband plasmons in parabolic quantum wells
    Bratschitsch, R
    Müller, T
    Kersting, R
    Strasser, G
    Unterrainer, K
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (24) : 3501 - 3503
  • [6] Band offset determination in the strained-layer InSb/AlxIn1-xSb system
    Dai, N
    Khodaparast, GA
    Brown, F
    Doezema, RE
    Chung, SJ
    Santos, MB
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (26) : 3905 - 3907
  • [7] Current focusing in InSb heterostructures
    Dedigama, A. R.
    Deen, D.
    Murphy, S. Q.
    Goel, N.
    Keay, J. C.
    Santos, M. B.
    Suzuki, K.
    Miyashita, S.
    Hirayama, Y.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 34 (1-2) : 647 - 650
  • [8] Dia N., 1998, APPL PHYS LETT, V73, P1101
  • [9] DIA N, 1998, APPL PHYS LETT, V73, P3132
  • [10] Line-shape analysis of differential transmission spectra in the coherent regime
    ElSayed, K
    Stanton, CJ
    [J]. PHYSICAL REVIEW B, 1997, 55 (15): : 9671 - 9678