Preparation and characterization of La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 superconducting bilayers

被引:0
作者
Zhang, Y. [1 ]
An, Y. H. [1 ]
Xing, Y. [1 ]
Dong, D. Y. [1 ]
Wang, S. L. [1 ]
Shen, J. Q. [1 ]
Li, P. G. [1 ]
Tang, W. H. [2 ]
机构
[1] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Dept Phys, Hangzhou 310018, Zhejiang, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Sch Sci, Beijing 100876, Peoples R China
基金
中国国家自然科学基金;
关键词
La2-xSrxCuO4 thin film; pulsed laser deposition; superconducting bilayers; rectifying property; DEPOSITION;
D O I
10.1017/S0885715612001017
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The c-oriented La1.8Sr0.2CuO4 and La1.9Sr0.1CuO4 bilayer films were deposited on (001) SrTiO3 single-crystal substrates by using the pulsed laser deposition technique. The effects of deposition parameters on the quality of thin films were investigated. The crystal structures and surface morphologies were characterized by means of XRD and SEM, and the results showed that an as-prepared film deposited with the optimized parameters has high quality. Then La1.8Sr0.2CuO4/La1.9Sr0.1CuO4 bilayers structure was prepared using the optimized parameters for each corresponding layer, and the electrical transport properties were measured. Interesting rectifying properties were observed at both room and low temperatures, and the rectifying ratio at low temperature was found to be much higher than that at room temperature. (C) 2013 International Centre for Diffraction Data.
引用
收藏
页码:S7 / S11
页数:5
相关论文
共 18 条
[1]   Two-dimensional superconductivity at a Mott insulator/band insulator interface LaTiO3/SrTiO3 [J].
Biscaras, J. ;
Bergeal, N. ;
Kushwaha, A. ;
Wolf, T. ;
Rastogi, A. ;
Budhani, R. C. ;
Lesueur, J. .
NATURE COMMUNICATIONS, 2010, 1
[2]   Superconductor-insulator transition in La2-xSrxCuO4 at the pair quantum resistance [J].
Bollinger, A. T. ;
Dubuis, G. ;
Yoon, J. ;
Pavuna, D. ;
Misewich, J. ;
Bozovic, I. .
NATURE, 2011, 472 (7344) :458-460
[3]   Electric field control of the LaAlO3/SrTiO3 interface ground state [J].
Caviglia, A. D. ;
Gariglio, S. ;
Reyren, N. ;
Jaccard, D. ;
Schneider, T. ;
Gabay, M. ;
Thiel, S. ;
Hammerl, G. ;
Mannhart, J. ;
Triscone, J. -M. .
NATURE, 2008, 456 (7222) :624-627
[4]   Film Thickness Dependence of Rectifying Properties of La1.85Sr0.15CuO4/Nb-SrTiO3 Junctions [J].
Chen Lei-Ming ;
Li Guang-Cheng ;
Zhang Yan ;
Guo Yan-Feng .
CHINESE PHYSICS LETTERS, 2010, 27 (07)
[5]   THICKNESS DEPENDENCE OF LA2-XSRXCUO4 FILMS [J].
CIEPLAK, MZ ;
BERKOWSKI, M ;
GUHA, S ;
CHENG, E ;
VAGELOS, AS ;
RABINOWITZ, DJ ;
WU, B ;
TROFIMOV, IE ;
LINDENFELD, P .
APPLIED PHYSICS LETTERS, 1994, 65 (26) :3383-3385
[6]   A 3-chamber deposition system for the simultaneous double-sided coating of 5-inch wafers [J].
Geerk, J ;
Zaitsev, A ;
Linker, G ;
Aidam, R ;
Schneider, R ;
Ratzel, F ;
Fromknecht, R ;
Scheerer, B ;
Reiner, H ;
Gaganidze, E ;
Schwab, R .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2001, 11 (01) :3856-3858
[7]   Doping tuned rectifying properties in La2-xSrxCuO4/Nb:SrTiO3 heterojunctions [J].
Guo, Y. F. ;
Guo, X. ;
Lei, M. ;
Chen, L. M. ;
Tang, W. H. ;
Li, P. G. ;
Fu, X. L. ;
Li, L. H. .
APPLIED PHYSICS LETTERS, 2009, 94 (14)
[8]   Single-crystalline-like La2-xSrxCuO4 thin films and their transport properties [J].
Huang, WW ;
Liu, BT ;
Wu, F ;
Jia, SL ;
Xu, B ;
Zhao, BR .
SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 1999, 12 (08) :529-532
[9]   Enhancement of the superconducting transition temperature of La2-xSrxCuO4 and La1.875Ba0.125CuO4 bilayers: Bilayer and reference film prepared on the same wafer [J].
Koren, G. ;
Millo, O. .
PHYSICAL REVIEW B, 2010, 81 (13)
[10]   Conventional proximity effect in bilayers of superconducting underdoped La1.88Sr0.12CuO4 islands coated with nonsuperconducting overdoped La1.65Sr0.35CuO4 [J].
Koren, G. ;
Millo, O. .
PHYSICAL REVIEW B, 2009, 80 (05)