Measurement of Channel Temperature in Ga2O3 MOSFETs

被引：0
|
作者：
Wong, Man Hoi [1 ]
Morikawa, Yoji [2 ]
Sasaki, Kohei [1 ,3 ]
Kuramata, Akito [3 ]
Yamakoshi, Shigenobu [3 ]
Higashiwaki, Masataka [1 ]
机构：
[1] Natl Inst Informat & Commun Technol, Tokyo, Japan
[2] Silvaco Japan Co Ltd, Yokohama, Kanagawa, Japan
[3] Tamura Corp, Tokyo, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [41] Recessed-Gate Enhancement-Mode β-Ga2O3 MOSFETs
    Chabak, Kelson D.
    McCandless, Jonathan P.
    Moser, Neil A.
    Green, Andrew J.
    Mahalingam, Krishnamurthy
    Crespo, Antonio
    Hendricks, Nolan
    Howe, Brandon M.
    Tetlak, Stephen E.
    Leedy, Kevin
    Fitch, Robert C.
    Wakimoto, Daiki
    Sasaki, Kohei
    Kuramata, Akito
    Jessen, Gregg H.
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (01) : 67 - 70
  • [42] The effectiveness of heat extraction by the drain metal contact of β-Ga2O3 MOSFETs
    Kim, Samuel H.
    Shoemaker, Daniel
    Chatterjee, Bikramjit
    Chabak, Kelson D.
    Green, Andrew J.
    Liddy, Kyle J.
    Jessen, Gregg H.
    Graham, Samuel
    Choi, Sukwon
    PROCEEDINGS OF THE TWENTIETH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2021), 2021, : 324 - 327
  • [43] Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
    Pearton, S. J.
    Ren, Fan
    Tadjer, Marko
    Kim, Jihyun
    JOURNAL OF APPLIED PHYSICS, 2018, 124 (22)
  • [44] Simulation Studies of Single-Event Effects in β-Ga2O3 MOSFETs
    Datta, Animesh
    Singisetti, Uttam
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (01) : 476 - 483
  • [45] Pulsed Power Performance of β-Ga2O3 MOSFETs at L-Band
    Moser, Neil A.
    Asel, Tadj
    Liddy, Kyle J.
    Lindquist, Miles
    Miller, Nicholas C.
    Mou, Shin
    Neal, Adam
    Walker, Dennis E.
    Tetlak, Steve
    Leedy, Kevin D.
    Jessen, Gregg H.
    Green, Andrew J.
    Chabak, Kelson D.
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (07) : 989 - 992
  • [46] Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling
    Fregolent, Manuel
    Brusaterra, Enrico
    De Santi, Carlo
    Tetzner, Kornelius
    Wuerfl, Joachim
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    Meneghini, Matteo
    APPLIED PHYSICS LETTERS, 2022, 120 (16)
  • [47] Thermally-Aware Layout Design of β-Ga2O3 Lateral MOSFETs
    Kim, Samuel H.
    Shoemaker, Daniel
    Chatterjee, Bikramjit
    Green, Andrew J.
    Chabak, Kelson D.
    Heller, Eric R.
    Liddy, Kyle J.
    Jessen, Gregg H.
    Graham, Samuel
    Choi, Sukwon
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (03) : 1251 - 1257
  • [48] Modeling of the gate leakage in MOSFETs with Al2O3/β-Ga2O3 gate stack
    De Santi, C.
    Fregolent, M.
    Brusaterra, E.
    Tetzner, K.
    Wuerfl, J.
    Buffolo, M.
    Meneghesso, G.
    Zanoni, E.
    Meneghini, M.
    OXIDE-BASED MATERIALS AND DEVICES XV, 2024, 12887
  • [49] High-Voltage β-Ga2O3 RF MOSFETs With a Shallowly-Implanted 2DEG-Like Channel
    Yu, Xinxin
    Gong, Hehe
    Zhou, Jianjun
    Shen, Zhenghao
    Xu, Wenhui
    You, Tiangui
    Wang, Jian
    Zhang, Shengnan
    Wang, Yingmin
    Zhang, Kai
    Tao, Ran
    Wu, Yun
    Ren, Fang-Fang
    Ou, Xin
    Kong, Yuechan
    Li, Zhonghui
    Chen, Tangsheng
    Chen, Dunjun
    Gu, Shulin
    Zheng, Youdou
    Ye, Jiandong
    Zhang, Rong
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (07) : 1060 - 1063
  • [50] A comparative study of Ir/Ga2O3, Pt/Ga2O3, and Ru/Ga2O3 catalysts in selective hydrogenation of crotonaldehyde
    Gebauer-Henke, E.
    Farbotko, J.
    Touroude, R.
    Rynkowski, J.
    KINETICS AND CATALYSIS, 2008, 49 (04) : 574 - 580
12345