Measurement of Channel Temperature in Ga2O3 MOSFETs

被引：0
|
作者：
Wong, Man Hoi [1 ]
Morikawa, Yoji [2 ]
Sasaki, Kohei [1 ,3 ]
Kuramata, Akito [3 ]
Yamakoshi, Shigenobu [3 ]
Higashiwaki, Masataka [1 ]
机构：
[1] Natl Inst Informat & Commun Technol, Tokyo, Japan
[2] Silvaco Japan Co Ltd, Yokohama, Kanagawa, Japan
[3] Tamura Corp, Tokyo, Japan
来源：
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [21] Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer
    Wong, Man Hoi
    Sasaki, Kohei
    Kuramata, Akito
    Yamakoshi, Shigenobu
    Higashiwaki, Masataka
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (12)
  • [22] Demonstration of Ga2O3(Gd2O3)/InGaAs enhancement-mode n-channel MOSFETs
    Ren, F
    Hong, M
    Kuo, JM
    Hobson, WS
    Tsai, HS
    Lothian, JR
    Mannaerts, JP
    Kwo, J
    Chu, SNG
    Lin, J
    Chen, YK
    Cho, AY
    55TH ANNUAL DEVICE RESEARCH CONFERENCE, DIGEST - 1997, 1997, : 78 - 79
  • [23] Nano-structured phases of gallium oxide (GaOOH, α-Ga2O3, β-Ga2O3, γ-Ga2O3, δ-Ga2O3, and ε-Ga2O3): fabrication, structural, and electronic structure investigations
    Sharma, Aditya
    Varshney, Mayora
    Saraswat, Himani
    Chaudhary, Surekha
    Parkash, Jai
    Shin, Hyun-Joon
    Chae, Keun-Hwa
    Won, Sung-Ok
    INTERNATIONAL NANO LETTERS, 2020, 10 (01) : 71 - 79
  • [24] Nano-structured phases of gallium oxide (GaOOH, α-Ga2O3, β-Ga2O3, γ-Ga2O3, δ-Ga2O3, and ε-Ga2O3): fabrication, structural, and electronic structure investigations
    Aditya Sharma
    Mayora Varshney
    Himani Saraswat
    Surekha Chaudhary
    Jai Parkash
    Hyun-Joon Shin
    Keun-Hwa Chae
    Sung-Ok Won
    International Nano Letters, 2020, 10 : 71 - 79
  • [25] CONDUCTION PROPERTIES AND THRESHOLD VOLTAGE INSTABILITY IN β-Ga2O3 MOSFETs
    Fregolent, Manuel
    Brusaterra, Enrico
    De Santi, Carlo
    Tetzner, Kornelius
    Wuerfl, Joachim
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    Meneghini, Matteo
    OXIDE-BASED MATERIALS AND DEVICES XIII, 2022, 12002
  • [26] Influence of gate recess on the electronic characteristics of β-Ga2O3 MOSFETs
    Lv, Yuanjie
    Mo, Jianghui
    Song, Xubo
    He, Zezhao
    Wang, Yuangang
    Tan, Xin
    Zhou, Xingye
    Gu, Guodong
    Guo, Hongyu
    Feng, Zhihong
    SUPERLATTICES AND MICROSTRUCTURES, 2018, 117 : 132 - 136
  • [27] Ga2O3(Gd2O3) as a gate dielectric for GaAs MOSFETs (invited)
    Hong, M
    Kwo, J
    Liu, CT
    Marcus, MA
    Lay, TS
    Ren, F
    Mannaerts, JP
    Ng, KK
    Chen, YK
    Chou, LJ
    Hsieh, KC
    Cheng, KY
    PROCEEDINGS OF THE SYMPOSIUM ON LIGHT EMITTING DEVICES FOR OPTOELECTRONIC APPLICATIONS AND THE TWENTY-EIGHTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS, 1998, 98 (02): : 434 - 442
  • [28] Temperature Dependent Characterization of Ga2O3 MOSFETs with Spin-on-Glass Source/Drain Doping
    Zeng, Ke
    Singisetti, Uttam
    2017 75TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2017,
  • [29] Demonstration of enhancement-mode p-channel GaAs MOSFETs with Ga2O3(Gd2O3) passivation
    Ren, F
    Hong, M
    Hobson, WS
    Kuo, JM
    Lothian, JR
    Mannaerts, JP
    Kwo, J
    Chu, SNG
    Chen, YK
    Cho, AY
    PROCEEDINGS OF THE TWENTY-SIXTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVI), 1997, 97 (01): : 84 - 90
  • [30] Channel Properties of Ga2O3-on-SiC MOSFETs
    Wang, Yibo
    Xu, Wenhui
    Han, Genquan
    You, Tiangui
    Mu, Fengwen
    Hu, Haodong
    Liu, Yan
    Zhang, Xinchuang
    Huang, Hao
    Suga, Tadatomo
    Ou, Xin
    Ma, Xiaohua
    Hao, Yue
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (03) : 1185 - 1189
12345