Performance Modulation for Back-Illuminated AlGaN Ultraviolet Avalanche Photodiodes Based on Multiplication Scaling

被引：10

作者：

Cai, Qing ^{[1
]}

Li, Qian ^{[2
,3
]}

Li, Mo ^{[2
,3
]}

Tang, Yin ^{[1
]}

Wang, Jin ^{[1
]}

Xue, Junjun ^{[4
]}

Chen, Dunjun ^{[1
]}

Lu, Hai ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, Youdou ^{[1
]}

机构：

[1] Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China

[2] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610054, Sichuan, Peoples R China

[3] China Acad Engn Phys, Inst Elect Engn, Chengdu 610054, Sichuan, Peoples R China

[4] Nanjing Univ Posts & Telecommun, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China

来源：

IEEE PHOTONICS JOURNAL | 2019年 / 11卷 / 03期

基金：

国家重点研发计划;

关键词：

AlGaN; ultraviolet; avalanche photodiodes; multiplication scaling;

D O I：

10.1109/JPHOT.2019.2914146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Back-illuminated Al0.1Ga0.9N ultraviolet avalanche photodiodes (APDs) of various multiplication widths were fabricated on AlN templates with a separate absorption and multiplication structure. The impacts of an increased multiplication scale on a device performance were investigated. The avalanche breakdown voltage was found to increase as the multiplication layer thickness (MLT) increases. The APD with 230-nm-MLT achieved a superior maximum multiplication gain of 5.4 x 10(4), higher than that obtained in devices with 150-nm- and 300-nm-MLT. Theoretical simulations demonstrated that the critical electric field intensity in an avalanche region would decrease as the rising of MLT, indicating the modulating ability of multiplication scaling on the AlGaN APD performance. In addition, APDs fabricated on different AlN templates were employed to study the effects of crystalline quality on device properties.

引用

页数：7

共 17 条

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