Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions

被引：6

作者：

Shi, J. ^{[1
]}

Wichmann, N. ^{[1
]}

Roelens, Y. ^{[1
]}

Bollaert, S. ^{[1
]}

机构：

[1] Univ Lille 1, Inst Elect Microelect & Nanotechnol, UMR CNRS 8520, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 24期

关键词：

D O I：

10.1063/1.4811787

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAlAs/InGaAs high electron mobility transistors (HEMTs) have been transferred onto polyimide flexible substrate. By means of epitaxial layer optimization, kink effect in HEMT on flexible substrate, which existed in our previous work, has been suppressed. The value of maximum drain current reaches 580mA/mm and high cut-off frequencies f(T) = 160GHz, f(max) = 290GHz are obtained for unbent status. The effect of mechanical bending conditions on electrical performance has been also investigated in static and dynamic regimes. This study indicates that electrical characteristics are weakly affected by bending induced strain. These bending mechanical tests demonstrate the viable flexibility of the devices. (C) 2013 AIP Publishing LLC.

引用

页数：4