High-density effects due to interaction of self-trapped exciton with (Ba, 5p) core hole in BaF2 at low temperature

被引:0
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作者
Terekhin, MA [1 ]
Svechnikov, NY [1 ]
Tanaka, S [1 ]
Hirose, S [1 ]
Kamada, M [1 ]
机构
[1] INST MOL SCI,OKAZAKI,AICHI 444,JAPAN
关键词
D O I
10.1063/1.593409
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of VUV undulator excitation intensity on the emission shape and decay time of BaF2 crystal at low temperature has been observed. The findings are explained in terms of quenching of Auger-free luminescence (cross luminescence) by self-trapped exciton via Forster mechanism energy transfer. (C) 1997 American Institute of Physics.
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页码:349 / 350
页数:2
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