Observation of Electroluminescence From Quantum Wells Far From p-GaN Layer in Nitride-Based Light-Emitting Diodes

被引：3

作者：

Zheng, Zhiyuan ^{[1
]}

Chen, Zimin ^{[1
]}

Chen, Yingda ^{[1
]}

Wu, Hualong ^{[1
]}

Huang, Shanjin ^{[1
]}

Fan, Bingfeng ^{[1
]}

Wu, Zhisheng ^{[1
]}

Wang, Gang ^{[1
]}

Jiang, Hao ^{[1
]}

机构：

[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

来源：

JOURNAL OF DISPLAY TECHNOLOGY | 2013年 / 9卷 / 04期

关键词：

Crystalline quality; electroluminescence; hole injection; light-emitting diode (LED); polarization effect; quantum well; INGAN INSERTION LAYER; EFFICIENCY;

D O I：

10.1109/JDT.2012.2225091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the observation of electroluminescence from the first to fourth quantum wells (QWs) from the p-GaN layer in InGaN/GaN multiple-QW light-emitting diodes (LEDs) with various indium contents (4%-16%) in each QW. The investigated LED sample showed a lower turn-on voltage and ideality factor as well as a reduction of etching pit density compared with the reference sample. Also, the X-ray reciprocal space maps revealed a partial strain relaxation in the active region. The enhanced hole injection efficiency was attributed to the weakening of strain-induced polarization field in the QWs and the good crystalline quality.

引用

页码：260 / 265

页数：6

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