Opto-valleytronics in the 2D van der Waals heterostructure

被引:32
作者
Rasmita, Abdullah [1 ]
Gao, Wei-bo [1 ,2 ,3 ]
机构
[1] Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[2] Nanyang Technol Univ, Photon Inst, Singapore 637371, Singapore
[3] Nanyang Technol Univ, Ctr Disrupt Photon Technol, Singapore 637371, Singapore
基金
新加坡国家研究基金会;
关键词
opto-valleytronics; two-dimensional (2D) heterostructure; interlayer exciton; transition metal dichalcogenide; proximity effect; ULTRAFAST CHARGE-TRANSFER; VALLEY POLARIZATION; INTERLAYER EXCITONS; ELECTRICAL CONTROL; MONOLAYER; SPIN; DYNAMICS; MOS2; EXCITATIONS; POLARITONS;
D O I
10.1007/s12274-020-3036-x
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The development of information processing devices with minimum carbon emission is crucial in this information age. One of the approaches to tackle this challenge is by using valleys (local extremum points in the momentum space) to encode the information instead of charges. The valley information in some material such as monolayer transition metal dichalcogenide (TMD) can be controlled by using circularly polarized light. This opens a new field called opto-valleytronics. In this article, we first review the valley physics in monolayer TMD and two-dimensional (2D) heterostructure composed of monolayer TMD and other materials. Such 2D heterostructure has been shown to exhibit interesting phenomena such as interlayer exciton, magnetic proximity effect, and spin-orbit proximity effect, which is beneficial for opto-valleytronics application. We then review some of the optical valley control methods that have been used in the monolayer TMD and the 2D heterostructure. Finally, a summary and outlook of the 2D heterostructure opto-valleytronics are given.
引用
收藏
页码:1901 / 1911
页数:11
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