Dissociative adsorption of SiH2Cl2 on Si(111)7x7

被引：10
作者：
Fehrenbacher, M
Rauscher, H
Behm, RJ
机构：
来源：
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-INTERNATIONAL JOURNAL OF RESEARCH IN PHYSICAL CHEMISTRY & CHEMICAL PHYSICS | 1997年 / 198卷
关键词：
silicon chemical vapor deposition; silicon atomic layer epitaxy; surface reactions; adsorption; tunneling microscopy; dichlorosilane dissociation;
D O I：
10.1524/zpch.1997.198.Part_1_2.205
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Adsorption and reaction of SiH2Cl2 (DCS) with Si(111)7 x 7 at 300 K were investigated by spectroscopic (XPS, AES) and atomically resolved topographic (STM) measurements. It is shown that DCS adsorption proceeds under scission of a Si-Cl bond to produce SiH2Cl and Cl, where the former adsorb at a rest atom or corner hole dangling bond, while the Cl atom reacts with an adjacent adatom dangling bond. This is explained in a four center reaction mechanism, involving two neighboring dangling bonds of the substrate and two centers of the polar DCS molecule. Evaluation of the Cl site occupation, including pair correlation and site blocking effects, shows a preferential Cl termination of center adatoms. This mechanism also explains the observed second order kinetics for DCS adsorption.
引用
收藏
页码：205 / 220
页数：16
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