Optimizing diode thickness for thin-film solid state thermal neutron detectors

被引：20

作者：

Murphy, John W. ^{[1
]}

Kunnen, George R. ^{[2
]}

Mejia, Israel ^{[1
]}

Quevedo-Lopez, Manuel A. ^{[1
]}

Allee, David ^{[2
]}

Gnade, Bruce ^{[1
]}

机构：

[1] Univ Texas Dallas, Dept Mat & Sci, Richardson, TX 75080 USA

[2] Arizona State Univ, Flexible Display Ctr, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 14期

基金：

美国国家科学基金会;

关键词：

Compendex;

D O I：

10.1063/1.4757292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, B-10 and (LiF)-Li-6. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4757292]

引用

页数：5

共 7 条

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Applied Radiation and Isotopes, 2022, 181
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