Temperature dependence of the Hall and longintudinal resistances in a quantum Hall resistance standard

被引：19
|
作者：
Matthews, J [1 ]
Cage, ME
机构：
[1] Univ Maryland, College Pk, MD 20742 USA
[2] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
来源：
JOURNAL OF RESEARCH OF THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY | 2005年 / 110卷 / 05期
关键词：
quantum Hall effect; resistance standard; temperature dependence;
D O I：
10.6028/jres.110.078
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We present detailed measurements of the temperature dependence of the Hall and longitudinal resistances on a quantum Hall device [( GaAs( 7)] which has been used as a resistance standard at NIST. We find a simple power law relationship between the change in Hall resistance and the longitudinal resistance as the temperature is varied between 1.4 K and 36 K. This power law holds over seven orders of magnitude change in the Hall resistance. We fit the temperature dependence above about 4 K to thermal activation, and extract the energy gap and the effective g-factor.
引用
收藏
页码：497 / 510
页数：14
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