Improved Efficiency Droop in a GaN-Based Light-Emitting Diode with an AlInN Electron-Blocking Layer

被引：2

作者：

Wen Xiao-Xia ^{[1
]}

Yang Xiao-Dong ^{[1
]}

He Miao ^{[1
]}

Li Yang ^{[2
]}

Wang Geng ^{[1
]}

Lu Ping-Yuan ^{[1
]}

Qian Wei-Ning ^{[1
]}

Li Yun ^{[1
]}

Zhang Wei-Wei ^{[1
]}

Wu Wen-Bo ^{[1
]}

Chen Fang-Sheng ^{[1
]}

Ding Li-Zhen ^{[1
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Lab Micronano Photon Funct Mat & Devices Guangdon, Guangzhou 510631, Guangdong, Peoples R China

[2] Univ St Andrews, Sch Chem, St Andrews KY169S, Fife, Scotland

来源：

CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 09期

关键词：

10;

D O I：

10.1088/0256-307X/29/9/097304

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

GaN-based light-emitting devices (LEDs) with different electron blocking layers are theoretically studied and compared by using the advanced physical models of a semiconductor device simulation program. It is found that the structure with an AlInN electron blocking layer shows improved light output power, lower current leakage and efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly accounted for by efficient electron blocking. It can be concluded that Auger recombination is responsible for the dominant origin of the efficiency droop of a GaN-based LED as current increases.

引用

页数：3

共 10 条

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