Simulation study of type-II Ge/Si quantum dot for solar cell applications

被引：20
作者：
Hu, Weiguo [1 ,2 ]
Rahman, Mohammad Maksudur [1 ,2 ]
Lee, Ming-Yi [3 ]
Li, Yiming [3 ,4 ]
Samukawa, Seiji [1 ,2 ,4 ]
机构：
[1] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan
[3] Natl Chiao Tung Univ, Dept Elect & Comp Engn, Hsinchu 300, Taiwan
[4] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 12期
关键词：
EFFICIENCY; SILICON;
D O I：
10.1063/1.4821114
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electronic structure, miniband formation conditions, and required process parameters of type-II Ge/Si quantum dots are calculated using a 3D finite element method. We further estimate the device conversion efficiency and optimize the appropriate operation conditions. By using the crystalline silicon as the matrix, the explored intermediate band solar cell (IBSC) may not be suitable for 1 sun application, but it is a great value under concentration application. By considering an appropriate H-passivation treatment on amorphous silicon, the type II Ge/Si IBSC can achieve 44.0% conversion efficiency under 1 sun application. (C) 2013 AIP Publishing LLC.
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页数：4
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