Simulation study of type-II Ge/Si quantum dot for solar cell applications

被引：20

作者：

Hu, Weiguo ^{[1
,2
]}

Rahman, Mohammad Maksudur ^{[1
,2
]}

Lee, Ming-Yi ^{[3
]}

Li, Yiming ^{[3
,4
]}

Samukawa, Seiji ^{[1
,2
,4
]}

机构：

[1] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

[3] Natl Chiao Tung Univ, Dept Elect & Comp Engn, Hsinchu 300, Taiwan

[4] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 114卷 / 12期

关键词：

EFFICIENCY; SILICON;

D O I：

10.1063/1.4821114

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure, miniband formation conditions, and required process parameters of type-II Ge/Si quantum dots are calculated using a 3D finite element method. We further estimate the device conversion efficiency and optimize the appropriate operation conditions. By using the crystalline silicon as the matrix, the explored intermediate band solar cell (IBSC) may not be suitable for 1 sun application, but it is a great value under concentration application. By considering an appropriate H-passivation treatment on amorphous silicon, the type II Ge/Si IBSC can achieve 44.0% conversion efficiency under 1 sun application. (C) 2013 AIP Publishing LLC.

引用

页数：4

共 21 条

[1] Control of optical bandgap energy and optical absorption coefficient by geometric parameters in sub-10 nm silicon-nanodisc array structure [J].

Budiman, Mohd Fairuz ;

Hu, Weiguo ;

Igarashi, Makoto ;

Tsukamoto, Rikako ;

Isoda, Taiga ;

Itoh, Kohei M. ;

Yamashita, Ichiro ;

Murayama, Akihiro ;

Okada, Yoshitaka ;

Samukawa, Seiji .

NANOTECHNOLOGY, 2012, 23 (06)

[2] On the reduction of direct tunneling leakage through ultrathin gate oxides by a one-dimensional Schrodinger-Poisson solver [J].

Cassan, E .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (11) :7931-7939

[3] CARRIER RECOMBINATION AND LIFETIME IN HIGHLY DOPED SILICON [J].

FOSSUM, JG ;

MERTENS, RP ;

LEE, DS ;

NIJS, JF .

SOLID-STATE ELECTRONICS, 1983, 26 (06) :569-576

[4] Wide band gap amorphous silicon thin films prepared by chemical annealing [J].

Futako, W ;

Yoshino, K ;

Fortmann, CM ;

Shimizu, I .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :812-818

[5] Solar cell efficiency tables (version 40) [J].

Green, Martin A. ;

Emery, Keith ;

Hishikawa, Yoshihiro ;

Warta, Wilhelm ;

Dunlop, Ewan D. .

PROGRESS IN PHOTOVOLTAICS, 2012, 20 (05) :606-614

[6] Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells [J].

Hu, W. G. ;

Inoue, T. ;

Kojima, O. ;

Kita, T. .

APPLIED PHYSICS LETTERS, 2010, 97 (19)

[7] Intermediate band photovoltaics based on interband-intraband transitions using In0.53Ga0.47As/InP superlattice [J].

Hu, Weiguo ;

Harada, Yukihiro ;

Hasegawa, Aiko ;

Inoue, Tomoya ;

Kojima, Osamu ;

Kita, Takashi .

PROGRESS IN PHOTOVOLTAICS, 2013, 21 (04) :472-480

[8] Realistic quantum design of silicon quantum dot intermediate band solar cells [J].

Hu, Weiguo ;

Igarashi, Makoto ;

Lee, Ming-Yi ;

Li, Yiming ;

Samukawa, Seiji .

NANOTECHNOLOGY, 2013, 24 (26)

[9] Band alignment and conversion efficiency in Si/Ge type-II quantum dot intermediate band solar cells [J].

Kechiantz, A. M. ;

Kocharyan, L. M. ;

Kechiyants, H. M. .

NANOTECHNOLOGY, 2007, 18 (40)

[10] Miniband formation in a quantum dot crystal [J].

Lazarenkova, OL ;

Balandin, AA .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5509-5515

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