In-plane orientation control of (001)YBa2Cu3O7-delta grown on (001)MgO by pulsed organometallic beam epitaxy

被引：10
作者：
Buchholz, DB
Lei, JS
Mahajan, S
Markworth, PR
Chang, RPH
Hinds, B
Marks, TJ
Schindler, JL
Kannewurf, CR
Huang, Y
Merkle, KL
机构：
[1] NORTHWESTERN UNIV, DEPT CHEM, EVANSTON, IL 60208 USA
[2] NORTHWESTERN UNIV, DEPT ELECT ENGN, EVANSTON, IL 60208 USA
[3] ARGONNE NATL LAB, DIV MAT SCI, ARGONNE, IL 60439 USA
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 21期
关键词：
D O I：
10.1063/1.115569
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thin films of (001) YBCO are grown on epitaxially polished (001) MgO by pulsed organometallic beam epitaxy. The in-plane orientation of the film is controlled by the thickness of a BaO layer, grown in situ, prior to the YBCO growth-Eor thin BaO layers(< approximate to 7 x 10(14) Ba/cm(2)) the films grown [11O]YBCO\\[100]MgO. For thick BaO layers (> approximate to 11 x 10(14) Ba/cm(2)) the films grow [100]YBCO\\[100]MgO. A mechanism that relates the change in YBCO in-plane orientation to a change in the structure of the initial BaO layers with BaO thickness is described. (C) 1996 American Institute of Physics.
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收藏
页码：3037 / 3039
页数：3
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