Ferromagnetic cobalt and iron top contacts on an organic semiconductor: Evidence for a reacted interface

被引：24

作者：

Aristov, V. Yu. ^{[1
,2
]}

Molodtsova, O. V. ^{[1
]}

Ossipyan, Yu. A. ^{[2
]}

Doyle, B. P. ^{[3
]}

Nannarone, S. ^{[3
,4
]}

Knupfer, M. ^{[1
]}

机构：

[1] IFW Dresden Elect & Opt Properties, D-01171 Dresden, Germany

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[3] TASC INFM Lab, I-34012 Trieste, Italy

[4] Univ Modena, Dipartimento Ingn Mat & Ambiente, I-41100 Modena, Italy

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 01期

关键词：

Energy level alignment; Organic spintronic; Interfaces; Photoemission spectroscopy; ELECTRONIC-STRUCTURE; ELECTRICAL-PROPERTIES; GIANT MAGNETORESISTANCE; INJECTION; MOLECULES; CATHODE; METAL;

D O I：

10.1016/j.orgel.2008.09.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interface formation between the organic semiconductor copper-phthalocyanine and the ferromagnets Co and Fe has been investigated for the case of metal deposition onto the organic film using photoemission as well as X-ray absorption spectroscopy. Such interfaces might allow the injection of spin polarized currents into organic semiconductors. Our data reveal the formation of interfaces which are characterized by chemical reactions in the interfacial region. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：8 / 11

页数：4

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