950 Volt 4H-SiC MOSFETs: DC and Transient Performance and Gate Oxide Reliability

被引：6
|
作者：
Matocha, Kevin [1 ]
Stum, Zachary [1 ]
Arthur, Steve [1 ]
Dunne, Greg [1 ]
Stevanovic, Ljubisa [1 ]
机构：
[1] GE Global Res Ctr, Semicond Technol Lab, Niskayuna, NY 12180 USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 | 2009年 / 600-603卷
关键词：
MOSFETs; DMOSFET; reliability; time-dependent dielectric breakdown;
D O I：
10.4028/www.scientific.net/MSF.600-603.1131
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
SiC vertical MOSFETs were fabricated and characterized to achieve a blocking voltage of 950 Volts and a specific on-resistance of 8.4 m Omega-cm(2). Extrapolations of time-dependent dielectric breakdown measurements versus applied electric field indicate that the gate oxide mean-time to failure is approximately 10(5) hours at 250 degrees C.
引用
收藏
页码：1131 / 1134
页数：4
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