Effect of sol-gel derived ZnO annealing rate on light-trapping in inverted polymer solar cells

被引:24
作者
Yu, Xuan [1 ]
Yu, Xiaoming [1 ]
Hu, Ziyang [1 ,2 ]
Zhang, Jianjun [1 ]
Zhao, Gengshen [1 ]
Zhao, Ying [1 ]
机构
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Technol, Tianjin 300071, Peoples R China
[2] Ningbo Univ, Dept Microelect Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China
关键词
Thin films; Semiconductors; ZnO; Inverted polymer solar cells; Light-trapping; OPTICAL-PROPERTIES; BUFFER LAYER; THIN-FILMS; TEMPERATURE; PERFORMANCE;
D O I
10.1016/j.matlet.2013.06.063
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Different morphology zinc oxide (ZnO) thin films were prepared by a sol-gel method using two annealing rates and used as the electron transport layers in inverted polymer solar cells. The morphology, optical and structure properties were performed by AFM, UV-vis and XRD in order to study the effect of annealing rates. The undulating morphology of ZnO film fabricated at a slow heating rate of 9 degrees C/min possesses a rougher surface than that of ZnO film annealed at the fast heating rate of 56 degrees C/min, which provides efficient light-trapping and increases photon absorption. The resulting device shows 12.6% and 6.7% improvement in short current density and fill factor, respectively, compared with the device based on the rapidly annealed ZnO; a maximum power conversion efficiency of 2.55% was achieved. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:50 / 53
页数:4
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