Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures

被引：91

作者：

Gopinadhan, Kalon ^{[1
,2
,3
,4
]}

Shin, Young Jun ^{[3
,4
]}

Jalil, Rashid ^{[5
]}

Venkatesan, Thirumalai ^{[3
,4
,6
]}

Geim, Andre K. ^{[5
]}

Neto, Antonio H. Castro ^{[1
,2
,6
]}

Yang, Hyunsoo ^{[1
,2
,3
,4
]}

机构：

[1] Natl Univ Singapore, Ctr Adv Mat 2D, Singapore 117546, Singapore

[2] Natl Univ Singapore, Graphene Res Ctr, Singapore 117546, Singapore

[3] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[4] Natl Univ Singapore, NUSNNI Nanocore, Singapore 117576, Singapore

[5] Univ Manchester, Ctr Mesosci & Nanotechnol, Manchester M12 9PL, Lancs, England

[6] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

来源：

NATURE COMMUNICATIONS | 2015年 / 6卷

基金：

新加坡国家研究基金会;

关键词：

QUANTUM LINEAR MAGNETORESISTANCE; THERMAL-CONDUCTIVITY; ROOM-TEMPERATURE; BORON-NITRIDE; FIELD; STACKING;

D O I：

10.1038/ncomms9337

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Understanding magnetoresistance, the change in electrical resistance under an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here we report an extremely large local magnetoresistance of similar to 2,000% at 400 K and a non-local magnetoresistance of 490,000% in an applied magnetic field of 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene-based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

引用

页数：7

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