Elastic Properties and Buckling of Silicon Nanowires

被引：119

作者：

Hsin, Cheng-Lun ^{[1
,2
]}

Mai, Wenjie ^{[2
]}

Gu, Yudong ^{[2
]}

Gao, Yifan ^{[2
]}

Huang, Chi-Te ^{[1
]}

Liu, Yuzi ^{[2
]}

Chen, Lih-Juann ^{[1
]}

Wang, Zhong-Lin ^{[2
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

[2] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 20期

关键词：

D O I：

10.1002/adma.200800485

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The ultrahigh flexibility and strong mechanical toughness of silicon nanowires (SiNWs) is demonstrated using manipulation and measurements on buckled SiNWs in a scanning electron microscope (see figure). The experimental data and calculated results show that the nanowire can bear a large strain (1.5%), much more than the bulk material, while the elastic constant of the NW is similar to that of the bulk.

引用

页码：3919 / +

页数：6

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