128 x 128 infrared focal plane arrays based on Type-II InAs/GaSb superlattice

被引：2

作者：

Xu Jia-Jia ^{[1
]}

Jin Ju-Peng ^{[1
,2
]}

Xu Qing-Qing ^{[1
]}

Xu Zhi-Cheng ^{[1
,2
]}

Jin Chuan ^{[1
,2
]}

Zhou Yi ^{[1
,2
]}

Chen Hong-Lei ^{[1
]}

Lin Chun ^{[1
]}

Chen Jian-Xin ^{[1
]}

He Li ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2012年 / 31卷 / 06期

基金：

中国国家自然科学基金;

关键词：

long-wave infrared detector; InAs/GaSb superlattice; focal plane array; DETECTORS;

D O I：

10.3724/SP.J.1010.2012.00501

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we reported the growth and fabrication of a 128 x 128 infrared focal plane array detector made of type-II InAs/GaSb superlattice. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. It consisted of 200 periods of 13ML(InAs)/9ML(GaSb) for longwave infrared detection. The pixel of the detector had a conventional PIN structure with a size of 40 mu m x 40 mu m. The device fabrication process consisted of mesa etching, side-wall passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC). At 77 K, the detector had a 100% cut-off wavelength of 8.0 mu m, and a peak detectivity of 6.0 x 10(9) cmHz(1/2) W-1. Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.

引用

页码：501 / 504

页数：4

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