共 17 条
[1]
Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant
[J].
MICROMACHINES,
2018, 9 (12)
[2]
Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices
[J].
MICROMACHINES,
2018, 9 (12)
[3]
Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
[J].
MICROMACHINES,
2018, 9 (12)
[7]
Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells
[J].
MICROMACHINES,
2018, 9 (12)
[10]
Investigation on the I-V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs
[J].
MICROMACHINES,
2018, 9 (11)