Multicomponent Nanopatterns by Directed Block Copolymer Self-Assembly

被引:102
作者
Shin, Dong Ok [1 ,3 ]
Mun, Jeong Ho [1 ,2 ]
Hwang, Geon-Tae [1 ]
Yoon, Jong Moon [1 ,2 ]
Kim, Ju Young [1 ,2 ]
Yun, Je Moon [1 ,2 ]
Yang, Yong-Biao [4 ]
Oh, Youngtak [1 ,2 ]
Lee, Jeong Yong [1 ,2 ]
Shin, Jonghwa [1 ]
Lee, Keon Jae [1 ]
Park, Soojin [5 ]
Kim, Jaeup U. [4 ]
Kim, Sang Ouk [1 ,2 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
[2] Inst for Basic Sci Korea, Ctr Nanomat & Chem React, Taejon 305701, South Korea
[3] Elect & Telecommun Res Inst, Power Control Device Res Sect, Taejon 305700, South Korea
[4] Ulsan Natl Inst Sci & Technol UNIST, Sch Mech & Adv Mat Engn, Ulsan 689798, South Korea
[5] Ulsan Natl Inst Sci & Technol UNIST, Interdisciplinary Sch Green Energy, Ulsan 689798, South Korea
基金
新加坡国家研究基金会;
关键词
multicomponent; nanopattern; block copolymer; self-assembly; NONVOLATILE MEMORY APPLICATIONS; THIN-FILMS; SOFT GRAPHOEPITAXY; LITHOGRAPHY; PATTERNS; ARRAYS; NANOSTRUCTURES; TEMPLATES; NANOCRYSTALS; PHOTORESIST;
D O I
10.1021/nn403379k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Complex nanopatterns integrating diverse nanocomponents are crucial requirements for advanced photonics and electronics. Currently, such multicomponent nanopatterns are principally created by colloidal nanoparticle assembly, where large-area processing of highly ordered nanostructures raises significant challenge. We present multicomponent nanopatterns enabled by block copolymer (B(P) self-assembly, which offers device oriented sub-10-nm scale nanopatterns with arbitrary large-area scalability. In this approach, BCP nanopatterns direct the nanoscale lateral ordering of the overlaid second level BCP nanopatterns to create the superimposed multicomponent nanopatterns incorporating nanowires and nanodots. This approach introduces diverse chemical composition of metallic elements including Au, Pt, Fe, Pd, and Co into sub-10-nm scale nanopatterns. As immediate applications of multicomponent nanopatterns, we demonstrate multilevel charge-trap memory device with Pt-Au binary nanodot pattern and synergistic plasmonic properties of Au nanowire-Pt nanodot pattern.
引用
收藏
页码:8899 / 8907
页数:9
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