Static current-voltage characteristics of Au/CaF2/n-Si(111) MIS tunneling structures

被引：13

作者：

Suturin, S. M. ^{[1
]}

Banshchikov, A. G. ^{[1
]}

Sokolov, N. S. ^{[1
]}

Tyaginov, S. E. ^{[1
]}

Vexler, M. I. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2008年 / 42卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/S1063782608110110

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using molecular-beam epitaxy, Au/CaF2/n-Si(111) structures were fabricated that exhibit lower currents at a given fluoride film thickness (1.5-2 nm) than those of all similar structures studied. At a positive voltage at the metal, the current is in agreement with that calculated within the model with conservation of the transverse component of the wave vector during tunneling transport. Relative contributions of electron and hole components were analyzed for forward and reverse biases. The effect of the nonuniform distribution of the insulator thickness over the area on measured currents was estimated. The thin CaF2 layers that were grown are potentially applicable as barrier layers in various devices of functional electronics.

引用

页码：1304 / 1308

页数：5

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