Study of atomic layer deposited ZrO2 and ZrO2/TiO2 films for resistive switching application

被引：16

作者：

Kaerkkaenen, Irina ^{[1
,2
]}

Shkabko, Andrey ^{[1
,2
]}

Heikkila, Mikko ^{[3
]}

Niinisto, Jaakko ^{[3
]}

Ritala, Mikko ^{[3
]}

Leskela, Markku ^{[3
]}

Hoffmann-Eifert, Susanne ^{[1
,2
]}

Waser, Rainer ^{[1
,2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[2] Forschungszentrum Julich, JARA FIT, D-52425 Julich, Germany

[3] Univ Helsinki, Inorgan Chem Lab, FIN-00014 Helsinki, Finland

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 02期

关键词：

atomic layer deposition; dielectric properties; resistive switching; TiO2; ZrO2; NONVOLATILE MEMORY APPLICATIONS; TIO2; THIN-FILMS; ZIRCONIUM; OXIDE; DIELECTRICS; PRECURSORS; MECHANISM; WATER; ALD;

D O I：

10.1002/pssa.201330034

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin ZrO2 films and ZrO2/TiO2 bilayers grown by atomic layer deposition (ALD) are integrated into metal-oxide-metal (MOM) structures for investigation of resistive switching (RS) properties. The films have different microstructure depending on the used ALD oxygen source and stacking sequence for the bilayers. Pt/ZrO2/Ti/Pt devices show unipolar RS for oxide thicknesses of 11-18nm. The devices with O-3 grown ZrO2 show higher yield in comparison to the ones with H2O processed oxide. The switching polarity of the Pt/ZrO2/Ti/Pt cells depends on the thickness of the Ti electrode layer. The increase of the Ti layer thickness leads to a change in switching polarity from unipolar to bipolar. The formation of ZrO2/TiO2 bilayers results in changes in the RS behavior of the MOM cells depending on the stacking sequence.

引用

页码：301 / 309

页数：9

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