Low-Temperature Sol-Gel Derived ZnO Films as Electron Transporting Layers for Perovskite-Based Solar Cells

被引：3
|
作者：
Chen, Lung-Chien [1 ]
Tseng, Zong-Liang [2 ,3 ]
Lin, Chun-Cheng [4 ]
机构：
[1] Natl Taipei Univ Technol, Dept Electroopt Engn, 1,Sec 3,Chung Hsiao E Rd, Taipei 106, Taiwan
[2] Ming Chi Univ Technol, Organ Elect Res Ctr, 84 Gungjuan Rd, New Taipei 24301, Taiwan
[3] Ming Chi Univ Technol, Dept Elect Engn, 84 Gungjuan Rd, New Taipei 24301, Taiwan
[4] ROC Air Force Acad, Dept Math & Phys Sci, 1 Jieshou Rd, Kaohsiung 82047, Taiwan
来源：
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2019年 / 14卷 / 05期
关键词：
ZnO; CH3NH3PbI3; CH3NH3I; Perovskite; THIN-FILM; CH3NH3PBI3;
D O I：
10.1166/jno.2019.2531
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, a low temperature sol-gel deposited ZnO thin film was used as an electron-transport layer in planar type CH3NH3PbI3 perovskite-based solar cells. The devices based on ZnO were coated on glass and flexible substrates were compared and discussed. The results show that we can achieve a record efficiency of 13.5% (glass) and 10.2% (PET) under AM1.5G irradiation for the low temperature prepared ZnO based planar type perovskite solar cell.
引用
收藏
页码：723 / 728
页数：6
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