Low-Temperature Sol-Gel Derived ZnO Films as Electron Transporting Layers for Perovskite-Based Solar Cells

被引：3

作者：

Chen, Lung-Chien ^{[1
]}

Tseng, Zong-Liang ^{[2
,3
]}

Lin, Chun-Cheng ^{[4
]}

机构：

[1] Natl Taipei Univ Technol, Dept Electroopt Engn, 1,Sec 3,Chung Hsiao E Rd, Taipei 106, Taiwan

[2] Ming Chi Univ Technol, Organ Elect Res Ctr, 84 Gungjuan Rd, New Taipei 24301, Taiwan

[3] Ming Chi Univ Technol, Dept Elect Engn, 84 Gungjuan Rd, New Taipei 24301, Taiwan

[4] ROC Air Force Acad, Dept Math & Phys Sci, 1 Jieshou Rd, Kaohsiung 82047, Taiwan

来源：

JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS | 2019年 / 14卷 / 05期

关键词：

ZnO; CH3NH3PbI3; CH3NH3I; Perovskite; THIN-FILM; CH3NH3PBI3;

D O I：

10.1166/jno.2019.2531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, a low temperature sol-gel deposited ZnO thin film was used as an electron-transport layer in planar type CH3NH3PbI3 perovskite-based solar cells. The devices based on ZnO were coated on glass and flexible substrates were compared and discussed. The results show that we can achieve a record efficiency of 13.5% (glass) and 10.2% (PET) under AM1.5G irradiation for the low temperature prepared ZnO based planar type perovskite solar cell.

引用

页码：723 / 728

页数：6

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