A review of the AI2BIICIVDVI4 family as infrared nonlinear optical materials: the effect of each site on the structure and optical properties

被引:47
作者
Li, Guangmao [1 ,2 ]
Yang, Zhihua [1 ,2 ,3 ]
Li, Junjie [1 ,2 ,3 ]
Pan, Shilie [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, CAS Key Lab Funct Mat & Devices Special Environm, Xinjiang Tech Inst Phys & Chem, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
[2] Xinjiang Key Lab Elect Informat Mat & Devices, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
STRONG 2ND-HARMONIC GENERATION; DIAMOND-LIKE SEMICONDUCTOR; M-IV; CRYSTAL-STRUCTURES; METAL SULFIDES; GE; LASER; SE; SN; AGGAS2;
D O I
10.1039/d0cc05132b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Inorganic infrared (IR) second-order nonlinear optical (NLO) crystals have become increasingly important for fulfilling the demands of modern laser technology through frequency conversionviaoptical parametric oscillation (OPO) and optical parameter amplification (OPA) technology. The AI2B(II)C(IV)DVI4 family contains a large number of compounds (to our best knowledge, 102 formula) and shows abundant structural diversity; it could be regarded as a potential source of IR second-order NLO materials with tunable structures and properties. This article summarizes the authors' contributions to the AI2B(II)C(IV)DVI4 family, together with other reported related results where the NLO properties have been provided (a total of 38 compounds). In the title family: (1) the A(I)site can be occupied by the univalent coinage metals Cu and Ag or the alkali metals Li and Na; (2) the B(II)site involves divalent metals, including the alkaline earth metals (AEM) Sr and Ba or the d(10)metals Zn, Cd, and Hg; (3) the C(IV)site is prevalently IVA group semi-conducting Si and Ge, or Sn; and (4) the D(VI)site is S or Se. The structures and optical properties of these compounds are summarized and the influence of substitution at each site on the structures and properties is systematically analyzed.
引用
收藏
页码:11565 / 11576
页数:12
相关论文
共 91 条
[1]   LiBa4Ga5Q12 (Q = S, Se): Noncentrosymmetric Metal Chalcogenides with a Cesium Chloride Topological Structure Displaying a Remarkable Laser Damage Threshold [J].
Abudurusuli, Ailijiang ;
Li, Junjie ;
Tong, Tinghao ;
Yang, Zhihua ;
Pan, Shilie .
INORGANIC CHEMISTRY, 2020, 59 (08) :5674-5682
[2]   GROWTH AND CHARACTERIZATION OF AGGASE2 CRYSTALS [J].
AIROLDI, G ;
BEUCHERIE, P ;
RINALDI, C .
JOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) :239-244
[3]  
[Anonymous], 2016, ANGEW CHEM INT EDIT
[4]   Phase-matching properties of BaGa4S7 and BaGa4Se7: Wide-bandgap nonlinear crystals for the mid-infrared [J].
Badikov, Valeriy ;
Badikov, Dmitrii ;
Shevyrdyaeva, Galina ;
Tyazhev, Aleksey ;
Marchev, Georgi ;
Panyutin, Vladimir ;
Petrov, Valentin ;
Kwasniewski, Albert .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (01) :31-33
[5]   Phase-controlled synthesis of orthorhombic and tetragonal AgGaSe2 nanocrystals with high quality [J].
Bai, Tianyu ;
Xing, Shanghua ;
Li, Chunguang ;
Shi, Zhan ;
Feng, Shouhua .
CHEMICAL COMMUNICATIONS, 2016, 52 (55) :8581-8584
[6]   LINEAR AND NONLINEAR OPTICAL PROPERTIES OF AGGAS2, CUGAS2, AND CUINS2, AND THEORY OF WEDGE TECHNIQUE FOR MEASUREMENT OF NONLINEAR COEFFICIENTS [J].
BOYD, GD ;
KASPER, H ;
MCFEE, JH .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1971, QE 7 (12) :563-+
[7]   Li2CdGeS4, A Diamond-Like Semiconductor with Strong Second-Order Optical Nonlinearity in the Infrared and Exceptional Laser Damage Threshold [J].
Brant, Jacilynn A. ;
Clark, Daniel J. ;
Kim, Yong Soo ;
Jang, Joon I. ;
Zhang, Jian-Han ;
Aitken, Jennifer A. .
CHEMISTRY OF MATERIALS, 2014, 26 (10) :3045-3048
[8]   DIODE-LASER - PUMPED SOLID-STATE LASERS [J].
BYER, RL .
SCIENCE, 1988, 239 (4841) :742-747
[9]   From CuFeS2 to Ba6Cu2FeGe4S16: rational band gap engineering achieves large second-harmonic-generation together with high laser damage threshold [J].
Cao, Wangzhu ;
Mei, Dajiang ;
Yang, Yi ;
Wu, Yuanwang ;
Zhang, Lingyun ;
Wu, Yuandong ;
He, Xiao ;
Lin, Zheshuai ;
Huang, Fuqiang .
CHEMICAL COMMUNICATIONS, 2019, 55 (96) :14510-14513
[10]  
CHEN CT, 1985, SCI SIN B-CHEM B A M, V28, P235